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Effects of Ion-Irradiation and Hydrogenation on the Doping of InGaAIN Alloys

Published online by Cambridge University Press:  22 February 2011

S. J. Pearton ,
C. R. Abernathy ,
W. S. Hobson  and
F. Ren
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Carrier concentrations in doped InN, In0.37 Ga0.63 N and In0.75 Al0.25 N layers are reduced by both F+ ion implantation to produce resistive material for device isolation, and by exposure to a hydrogen plasma. In the former case, post-implant annealing at 450–500°C produces sheet resistances > 106 Ω/ℹ in initially n+ (7 x 1018 − 3 x 1019 cm−3) ternary layers and values of ∼5 x 103 Ω/ℹ in initially degenerately-doped (4 x 1020 cm−3) InN. The evolution of sheet resistance with post-implant annealing temperature is consistent with the introduction of deep acceptor states by the ion bombardment, and the subsequent removal of these states at temperatures −500°C where the initial carrier concentrations are restored. Hydrogenation of the nitrides at 200°C reduces the n-type doping levels by 1-2 orders of magnitude and suggests that unintentional carrier passivation occurring during cool down after epitaxial growth may play a role in determining the apparent doping efficiency in these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 261
Copyright
Copyright © Materials Research Society 1994

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