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Effects of HWCVD-deposited Seed Layers on Hydrogenated Microcrystalline Silicon Films on Glass Substrates

Published online by Cambridge University Press:  01 February 2011

Michael Musashi Adachi
Affiliation:
[email protected], Simon Fraser University, School of Engineering, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada, 604-825-2164
Wing Fai Lydia Tse
Affiliation:
[email protected], Simon Fraser University, School of Engineering Science, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada
Garnet Cluff
Affiliation:
[email protected], Simon Fraser University, Department of Physics, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada
Karen L. Kavanagh
Affiliation:
[email protected], Simon Fraser University, Department of Physics, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada
Karim S. Karim
Affiliation:
[email protected], Simon Fraser University, School of Engineering Science, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada
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Abstract

Microcrystalline silicon was deposited by hot-wire chemical vapor deposition (HWCVD) using a graphite filament with and without a thin 50 nm microcrystalline silicon seed layer. Increasing silane concentration diluted in H2 led to a decrease in crystalline fraction as well in a decrease in dark conductivity and photo-conductivity. In addition, films deposited with a seed layer were found to have higher dark conductivity and photo-conductivity than those without a seed layer but deposited at slower growth rates. However, Raman spectroscopy showed that use of a seed layer resulted in only a small increase in crystalline fraction at the surface of the films which had thicknesses between 250-400nm. TEM measurements confirmed the crystalline nature of deposited films showing average grain sizes of 25 nm.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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