Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-29T05:12:30.111Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Grain Boundaries in Amorphous/Multicrystalline Silicon Heterojunction Photovoltaic Cells

Published online by Cambridge University Press:  01 February 2011

M. Farrokh Baroughi  and
S. Sivoththaman
M. Farrokh Baroughi
Affiliation:
Department of Electrical & Computer Engineering, University of Waterloo, 200. University Avenue West, Waterloo, Ontario N2L 3G1, Canada.
S. Sivoththaman
Affiliation:
Department of Electrical & Computer Engineering, University of Waterloo, 200. University Avenue West, Waterloo, Ontario N2L 3G1, Canada.
Get access

Abstract

Spectral response and dark current-voltage characteristics of heterojunctions are used to investigate grain boundary degradation in photovoltaic properties of a-Si/mc-Si heterojunction solar cells. Measured spectral response inside the grain and on the grain boundary shows small but consistent QE degradation due to minority carrier recombination at the grain boundaries. No consistent difference is observed in dark current-voltage characteristics because of large diode area and periphery leakage current in the employed heterojunction diodes. Comparing measurement results and results from device modeling using the simulation software Medici, a recombination velocity of 4900 cm/sec is found at the grain boundaries of employed multicrystalline silicon wafer. The modeling and experimental results can also be used to define an effective grain area that serves as a measure of grain boundary recombination and the influence of grain size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L8.1
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nijs, J., Szlufcik, J., Poortmans, J., Sivoththaman, S., Mertens, R., ITED, 46, p.10 (1999)Google Scholar
2. Rosa, R. et al., Proc. of the 2nd world conference on PV energy conversion, p.2440 (1998)Google Scholar
3. Farrokh Baroughi, M. and Sivoththaman, S., Proc. of 27th International Conference on the Physics of Semiconductors, under reviewGoogle Scholar
4. Qun, B. et al., Proc. of 3rd World Conference on PV Energy Conversion, p.1282 (2003)Google Scholar
5. Ciszek, T. F. et al., Proc. of 23rd IEEE Photovoltaic Specialists Conference p.101 (1993)Google Scholar
6. Edmiston, , et al., Journal of Applied Physics, 80, p.6783 (1996)Google Scholar
7. Nouri, H. et al., Thin Solid Films 451–452, p.312 (2004)Google Scholar
8. Donolato, C., Semiconductor Science Technology, 15, p.15 (2000)Google Scholar
9. Jiang, L., Mat. Res. Soc. Symp. Proc. 609, p. A18.3.1 (2001)Google Scholar