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Effects of Electrical Stress and High-Energy Electron Irradiation on the InGaP/GaAs Heterojunction Phototransistor

Published online by Cambridge University Press:  11 May 2015

Phuc Hong Than ,
Kazuo Uchida ,
Takahiro Makino ,
Takeshi Ohshima  and
Shinji Nozaki
Phuc Hong Than
Affiliation:
Graduate School of Informatics and Engineering, The University of Electro-Communications, Chofu-shi, Tokyo 182-8585, Japan
Kazuo Uchida
Affiliation:
Graduate School of Informatics and Engineering, The University of Electro-Communications, Chofu-shi, Tokyo 182-8585, Japan
Takahiro Makino
Affiliation:
Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
Takeshi Ohshima
Affiliation:
Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
Shinji Nozaki*
Affiliation:
Graduate School of Informatics and Engineering, The University of Electro-Communications, Chofu-shi, Tokyo 182-8585, Japan
*
*Phone/Fax: +81-42-489-4486, Email: [email protected]
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Abstract

In this paper, we discuss the characteristics of the InGaP/GaAs heterojunction phototransistors (HPTs) before and after the electrical stress at room temperature and assess the effectiveness of the emitter-ledge passivation. Although an electrical stress given to the phototransistors by keeping a collector current density of 37 A/cm2 for 1 hour at room temperature was too small to affect the room-temperature common-emitter current gain and photocurrent of both HPTs with and without the emitter-ledge passivation, they showed a significant decrease at 420 K due to the room-temperature electrical stress. Nevertheless, the room-temperature common-emitter current gain and photocurrent of the HPT with the emitter-ledge passivation were still higher than those of the HPT without the emitter-ledge passivation. The effectiveness of the emitter-ledge passivation against the electrical stress was more significant than that on the current gain in the dark. In addition to the electrical stress experiment, for a potential application of the InGaP/GaAs HPTs in space, we will irradiate the HPTs with 1-MeV electrons at the Japan Atomic Energy Agency. Both current gain and photocurrent decreased significantly after the electron irradiation. In contrast to the electrical stress, the damage due to the high-energy electron irradiation is a bulk-related phenomenon, and the emitter-ledge passivation does not seem to suppress the degradation.

Keywords

III-Velectron irradiationdefects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1792: Symposium CC/FF – Defects and Materials Issues in Semiconductors—Relationship to Optoelectronic Properties and Device Reliability , 2015 , mrss15-2125479
Copyright
Copyright © Materials Research Society 2015 

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