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Effects of Crystallographic Planes on Focused Ion Beam Milled Patterns of Single Crystal Diamonds

Published online by Cambridge University Press:  01 March 2012

Rustin Golnabi ,
Won I. Lee ,
Deok-Yang Kim  and
Glen R. Kowach
Rustin Golnabi
Affiliation:
Bergen County Academies, 200 Hackensack Avenue, Hackensack, NJ 07601, U.S.A.
Won I. Lee
Affiliation:
Bergen County Academies, 200 Hackensack Avenue, Hackensack, NJ 07601, U.S.A.
Deok-Yang Kim
Affiliation:
Bergen County Academies, 200 Hackensack Avenue, Hackensack, NJ 07601, U.S.A.
Glen R. Kowach
Affiliation:
Department of Chemistry, The City College of New York, 160 Convent Avenue, New York, NY 10031, U.S.A.
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Abstract

Focused ion beam (FIB) milling of diamonds has been investigated in various ways to create desired structures on diamonds, but not much research has been reported on the effects of crystal orientation, i.e. {100}, {110} and {111} of diamonds on FIB milling. In our previous work, it was noted that focused ion beam milling may develop preferred etched directions related to the crystal orientation of crystalline diamonds. In order to further investigate the phenomenon, a focused beam of 30 kV Ga+ ions was utilized to generate various patterns on different crystallographic planes of single crystalline diamonds. The morphology of milled patterns has been monitored with various ion currents to find the relationship between crystal orientations of diamonds and their impacts on FIB milled patterns. The work showed significant differences in deformation among different crystal orientations of the single crystal diamond, and the largest area of milling in {111} crystallographic planes.

Keywords

diamondscanning electron microscopy (SEM)crystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1395: Symposium N – Diamond Electronics and Biotechnology–Fundamentals to Applications V , 2012 , mrsf11-1395-n12-34
Copyright
Copyright © Materials Research Society 2012

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References

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