Published online by Cambridge University Press: 25 February 2011
The influence of boron ion implants on the optical and physical properties of photochemically deposited SiO2 films on HgO 7 CdO 3Te and silicon has been investigated. The distributions of the boron atoms between the SiO2 film and substrate have been determined by a nondestructive neutron depth profiling method. The implants produce an apparent densification of the SiO2 films, which is accompanied by an increase in refractive index and changes in the infrared vibrational spectra for these films.