Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-03T04:12:49.441Z Has data issue: false hasContentIssue false

Effects of Annealing on The Structure of Ta2N Thin Films Deposited on Al2O3

Published online by Cambridge University Press:  15 February 2011

James E. Angelo
Affiliation:
Materials & Process Research Department, Sandia National Laboratories, Livermore, CA 94551-0969
N.R. Moody
Affiliation:
Materials & Process Research Department, Sandia National Laboratories, Livermore, CA 94551-0969
S.K. Venkataraman
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
W.W. Gerberich
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
Get access

Abstract

The microstructure of Ta2N thin films deposited by d.c. magnetron sputtering on (1120) surface of Al2O3 is investigated using transmission electron microscopy. The effects of exposing the thin film structure to a 600°C air environment are also explored. It will be shown that under the standard deposition conditions, stresses exist in the thin film structure which leads to the formation of a textured structure in the as-deposited Ta2N. Exposure of the thin film structure to an air environment transforms the Ta2N to Ta2O5 in the orthorhombic structure. In addition, evidence for a epitaxial relationship between the Ta2O5 and Al2O3 will be presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

[l] Adams, J.R. and Kramer, D.K., Surface Sci., 56, 482 (1976).Google Scholar
[2] Au, C.L., Anderson, W.A., Schmitz, D.A., Flassayer, J.C., and Collins, F.M., J. Maters. Res., 5, 1224 (1990).Google Scholar
[3] Shibata, S., Murasugi, K., and Kaminishi, K., Proc. Electron. Components Conf., 26, 177 (1976).Google Scholar
[4] Kolonits, V.P., Czermann, M., Geszti, O., and Menyhard, M., Thin Solid Films, 123, 45 (1985).Google Scholar
[5] Brady, D.P., Fuss, F.N., and Gerstenberg, D., Thin Solid Films, 66, 287 (1980).Google Scholar
[6] Yamagishi, H. and Miyauchi, M., Japanese J. Appl. Phys., 26, 852 (1987).Google Scholar
[7] Moody, N.R., Venkataraman, S., Nelson, J., Worobey, W., and Gerberich, W., MRS Symp. Proc., 327, 337 (1994).Google Scholar
[8] Thornton, J.A., J. Vac. Sci. Technol., 11, 666 (1974).Google Scholar
[9] Medlin, D.L., private communication (1994).Google Scholar
[10] Thornton, J.A., and Hoffman, D.W., J. Vac. Sci. Technol., 14, 164 (1977).Google Scholar
[11] Zhao, X.-A., Kolawa, E., and Nicolet, M-A., J. Vac. Sci. Technol. A, 4, 3139 (1986).Google Scholar