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Effects of Annealing on Structural and Optical Properties of ZnO Nanowires

Published online by Cambridge University Press:  11 September 2014

Anas Mazady ,
Abdiel Rivera  and
Mehdi Anwar
Anas Mazady
Affiliation:
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, Email: [email protected]
Abdiel Rivera
Affiliation:
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, Email: [email protected]
Mehdi Anwar
Affiliation:
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, Email: [email protected]
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Abstract

We report, for the first time, effects of annealing of ZnO NWs grown on p-Si substrates. ZnO NWs are grown using metalorganic chemical vapor deposition (MOCVD) and thermal annealing was performed in situ under nitrogen ambient at different stages of the growth process. Increasing the annealing temperature of the ZnO seed epi-layer from 635 °C to 800 °C does not affect the morphology of the grown NWs. In contrast, annealing the NWs themselves at 800 °C results in a 48% decrease of the surface area to volume ratio of the grown NWs. The optical quality can be improved by annealing the seed layer at a higher temperature of 800 °C, although annealing the NWs themselves does not affect the defect density.

Keywords

chemical vapor deposition (CVD) (deposition)nanostructureII-VI
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1675: Symposium K/RR – Synthesis, Characterization and Applications of Functional Materials—Thin Films and Nanostructures , 2014 , pp. 21 - 25
Copyright
Copyright © Materials Research Society 2014 

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References

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