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Effect of Underlayer in the Growth of Ta2o5 Films Prepared using MOCVD Method for Metal-Insulator-Metal Capacitors in RF-BiCMOS Technology

Published online by Cambridge University Press:  01 February 2011

Namwoong Paik ,
Kaman Lau ,
Ajita Rajan ,
Margaret McDonald ,
Hongjiang Sun ,
William America ,
Jerry Mase ,
Nancy Bell  and
Daniel Codi
Namwoong Paik
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Kaman Lau
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Ajita Rajan
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Margaret McDonald
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Hongjiang Sun
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
William America
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Jerry Mase
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Nancy Bell
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Daniel Codi
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
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Abstract

The properties of Ta2O5 thin films with respect to different underlayer stack have been investigated. At first, a set of samples were produced at various conditions as an underlayer of Ta2O5 film deposition. Then, Ta2O5 films were grown using a MOCVD method with Ta(OC2H5)5 pre-curser at 440 °C. The Process parameters for Ta2O5 films were remained same through the preparation of the sample set. The results were analyzed using various methods including thickness measurement, SEM, stress measurement, X-ray diffraction (XRD), and electrical property measurements. Different grain structures and growth rates were observed with respect to the different underlayer preparation condition mainly as a function of deposition temperature. The deposition rate varied from 0.6 Åsec to 1.8Åsec depend on different underlayer. Crystalline Ta2O5 films with large-grain-size were obtained on Aluminum/TiN underlayer stack. Films with crystalline structure show better leakage current characteristics than the amorphous one.

Keywords

x-ray diffraction (XRD)Taelectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A09-15
Copyright
Copyright © Materials Research Society 2009

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