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Effect of Underlayer in the Growth of Ta2o5 Films Prepared using MOCVD Method for Metal-Insulator-Metal Capacitors in RF-BiCMOS Technology

Published online by Cambridge University Press:  01 February 2011

Namwoong Paik ,
Kaman Lau ,
Ajita Rajan ,
Margaret McDonald ,
Hongjiang Sun ,
William America ,
Jerry Mase ,
Nancy Bell  and
Daniel Codi
Namwoong Paik
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Kaman Lau
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Ajita Rajan
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Margaret McDonald
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Hongjiang Sun
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
William America
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Jerry Mase
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Nancy Bell
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
Daniel Codi
Affiliation:
[email protected], NXP Semiconductor, Hopewell Junction, New York, United States
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Abstract

The properties of Ta2O5 thin films with respect to different underlayer stack have been investigated. At first, a set of samples were produced at various conditions as an underlayer of Ta2O5 film deposition. Then, Ta2O5 films were grown using a MOCVD method with Ta(OC2H5)5 pre-curser at 440 °C. The Process parameters for Ta2O5 films were remained same through the preparation of the sample set. The results were analyzed using various methods including thickness measurement, SEM, stress measurement, X-ray diffraction (XRD), and electrical property measurements. Different grain structures and growth rates were observed with respect to the different underlayer preparation condition mainly as a function of deposition temperature. The deposition rate varied from 0.6 Åsec to 1.8Åsec depend on different underlayer. Crystalline Ta2O5 films with large-grain-size were obtained on Aluminum/TiN underlayer stack. Films with crystalline structure show better leakage current characteristics than the amorphous one.

Keywords

x-ray diffraction (XRD)Taelectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A09-15
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES:

1. Kim, K., Jeong, G. T., Chun, C. H., and Hwang, S., Microelectron. Reliab., 42(4-5), 543 (2002).Google Scholar
2. Tasch, F. and Parker, L. H., Proc. IEEE, 77, 374 (1989).Google Scholar
3. Iida, T., Nakahara, M., Gotoh, S., and Akiba, H., Proc. IEEE Custom Integ. 18, 5, 1–4 (1990)Google Scholar
4. Kaga, T., Shinriki, H., Murai, F., Kawamoto, Y., Nakagone, Y., Takeda, F., Itoh, K., Semicond. Int. 6 98 (1991).Google Scholar
5. Ng, C. H., Ho, C. S., Chu, S. F., and Sun, S. C., IEEE TRANS. ELECT. DEV., 52, 7, 1399 (2005)Google Scholar
6. Kar-Roy, A., Hu, C., Racanelli, M., Compton, C. A., Kempt, P., Jolly, G., Sherman, P. N., Zheng, J., Zhang, Z., and Yin, A. G., Proc. IEEE IITC, 245 (1999)Google Scholar
7. Lee, J. S., Chang, S. J., Chen, J. F., Sun, S. C., Liu, C. H., and Liaw, U. H., Mater Chem. Phys., 77(1), 242 (2003).Google Scholar
8. Oehrlein, G. S., d'Heurle, F. M., and Reisman, A., J. Appl. Phys., 55, 3715 (1984).Google Scholar
9. Montero, I., Albella, J. M., and Martinez-Duart, J. M., J. Electrochem. Soc., 132, 814 (1985).Google Scholar
10. Wu, A. M., Wu, P. K., Lu, T. M., and Rymaszewski, E., Appl. Phys. Lett., 62, 3264 (1993).Google Scholar
11. Zeng, W., Eisenbraun, E., Frisch, H., Sullivan, J. J., Kaloyeros, A. E., Margalit, J., and Beck, K. J. ELECTROCHEM. SOC. 151 8 172–177 (2004)Google Scholar
12. Niimi, H., Johnson, R. S., Lucovsky, G., and Massoud, H. Z., in Physics and Chemistry of SiO2 and the Si-SiO2 Interface, The Electrochemical Society Proceedings Series, Pennington, NJ 2, 487, (2000).Google Scholar
13. Kukli, K., Ritala, M., and Leskela, M., Chem. Mater., 12, 1914 (2000).Google Scholar
14. Pignotlet, A., Rao, G.M., and Krupanidhi, S.B., Thin Solid Films, 258, 230 (1995)Google Scholar
15. Chiu, F. C., Wang, J. J., Lee, J. Y., and Wu, S. C. J. Appl. Phys. 81 (10), (1997)Google Scholar