Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-02T19:48:39.731Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Tribological Properties of Undoped and Florine-Doped Silicon Di-Oxide Fims on Chemical Mechanical Planarization Process

Published online by Cambridge University Press:  17 March 2011

A.K. Sikder ,
S. Thagella ,
U.C. Bandugilla  and
Ashok Kumar
A.K. Sikder
Affiliation:
Center for Microelectronics Research
S. Thagella
Affiliation:
Center for Microelectronics Research
U.C. Bandugilla
Affiliation:
Center for Microelectronics Research
Ashok Kumar
Affiliation:
Also with Department of Mechanical Engineering University of South Florida, Tampa, FL 33620
Get access

Abstract

Chemical mechanical planarization (CMP) occurs at an atomic level at the slurry/wafer interface and hence slurries and the interaction of the films and polishing pads play a critical role in the successful implementation of this process. Understanding the tribological properties of a dielectric layer in the CMP process is critical for successful evaluation and implementation of the materials. In this paper, we present the effect of tribological properties of undoped and florine doped silicon dioxide films on their CMP process. A micro-CMP tester was used to study the fundamental aspects of CMP process. We have studied the CMP process of oxides on polyurethane pads (IC1000-B4/SubaIV) with colloidal silica slurry at different conditions. The coefficient of friction (COF) and acoustic emission signal was monitored during process. The COF was measured during the process and was found to varies differently for different samples and with down force and platen roatation. The effects of machine's parameters on the polishing performance and correlation of physical phenomena with the process has been discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 697: Symposium P – Surface Engineering 2001--Fundamentals and Applications , January 2001 , P9.3
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fischer, T., Ann. Rev. Mater. Sci. 18, 303 (1988).Google Scholar
2. Steigerwald, J.M., Murarka, S.P., Gutmann, R.J., Chemical Mechanical Planarization of Microelectronic Materials, Wiley-Interscience, New York, 1997.Google Scholar
3. Thakurta, Dipto G., Borst, Christopher L., Schwendeman, Donald W., Gutmann, Ronald J., Gill, William N., Thin Solid Films, 366, 181(2000).Google Scholar
4. Wang, D., Lee, J., Holland, K., Bibby, T., Cale, T., J.Electrochem.Soc., 141,2843(1997).Google Scholar
5. Chekina, O.G., Keer, L.M., Liang, H.. J.Electrochem.Soc,145, 2100(1998).Google Scholar
6. Sundararajan, S., Thakurta, D.G., Schwendeman, D.W., Murarka, S.P., Gill, W.N., J. Electrochem.Soc. 146, 761(1999).Google Scholar
7. Braun, A.E., Semiconductor International, 65–74, (1998).Google Scholar
8. Marbeiter, Timothy, Cleary, Timothy, and Sutter, Karen, Semiconductor International, 76–80 (1998).Google Scholar
9. Bhushan, M., Rouse, R., and Lukens, J. E., Journal of Electrochemical Society, 142, 3845 (1995).Google Scholar
10. Jairath, R. et. al., Solid State Technology, pp. 71 (1994).Google Scholar
11. DeJule, R., Semiconductor International, pp. 54–60 (1997).Google Scholar
12. Runnels, S. R., Eyman, L. M., “Tribology Analysis of Chemical Mechanical Polishing,” Journal of Electrochemical Society, 141, 1900 (1994).Google Scholar
13. Reynolds, James, Swecker, A. L., Strojwas, Andrzej J., Levy, Ady, and Bell, Bobby, Solid State Technology, 39–44 (1998).Google Scholar
14. Runnels, S., Journal of Electronic Materials, 25, 1574, (1996).Google Scholar
15. Thakurta, D. P., Borst, C. L., Schwendman, D. W., Gutman, R. J., and Grill, W. N., Thin Solid Films, 336, 181, (2000).Google Scholar
16. Sikder, A.K., Irfan, I. M., Kumar, Ashok, Belyaev, A., Ostapenko, S. Calves, M., Harmon, J. P. and Anthony, J. M., Mat. Res. Soc. Symp. Proc., 671, M1.8.1–7 (2001).Google Scholar
17. Wrschka, P., Hernandez, J., Oehrlein, G. S. and King, J., J. Electrochem. Soc., 147, 706 (2000).Google Scholar
18. Park, T., Tugbawa, T. and Boning, D., Proc. CMP-MIC, Santa Clara, pp.196 (2000).Google Scholar
19. Morand, Y., Microelectronic Engineering, 50, 391 (2000).Google Scholar
20. Sikder, A.K., Giglio, Frank, Wood, John, kumar, Ashok and Anthony, J.M., J. Elec. Mater., 30(12) 2001.Google Scholar
21. Preston, F., J. Soc. Glass Technol., 11, 214 (1927).Google Scholar