Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-28T12:51:08.123Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect Of Trapping On Dielectric Conduction Mechanisms Of ULK/Cu Interconnects

Published online by Cambridge University Press:  31 January 2011

Virginie Verrière ,
Cyril Guedj ,
David Roy ,
Serge Blonkowski  and
Alain Sylvestre
Virginie Verrière
Affiliation:
[email protected], CEA-LETI Minatec, Grenoble, France
Cyril Guedj
Affiliation:
[email protected], CEA-LETI Minatec, Grenoble, France
David Roy
Affiliation:
[email protected], STMicroelectronics, Crolles, France
Serge Blonkowski
Affiliation:
[email protected], STMicroelectronics, Crolles, France
Alain Sylvestre
Affiliation:
[email protected], CNRS Grenoble, G2Elab, Grenoble, France
Get access

Abstract

Trapping in low-κ dielectric for interconnects was highlighted by voltage shift in IV current-voltage measurements. It is shown that effects of trapping can impact the extraction of conduction mechanisms. Capacitance measurements made on these materials reveal that trapping is at the origin in the increase of capacitance. The creation of dipoles because of this trapping explains this increase in the value of capacitance.

Keywords

dielectricelectrical propertiesdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1156: Symposium D – Materials, Processes and Reliability for Advanced Interconnects for Micro-and Nanoelectronics–2009 , 2009 , 1156-D01-04
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Vilmay, M. et al., “Characterization of low-k SiOCH dielectric for 45 nm technology and link between the dominant leakage path and the breakdown localization”, Microelectron. Eng., 85, 2075 (2008).Google Scholar
2 Solomon, P., “High-field electron trapping in SiO2”, J. of Appl. Phys., 48, 3843 (1977).Google Scholar
3 Coelho, R., “Propriétés des diélectriques”, Hermès (1990).Google Scholar
4 Jonscher, A.K., “Dielectric relaxation in solids”, J. Phys. D.: Appl. Phys., 32, 57 (1999).Google Scholar
5 Kamoulakos, G. et al., “Unified model for breakdown in thin and ultrathin gate oxides (12-15 nm)”, J. of Appl. Phys., 86, 5131 (1999).Google Scholar