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Effect of Thermal Equilibration on Dark- and Photo-Conductivities in Undoped Amorphous Silicon-Germanium Alloys

Published online by Cambridge University Press:  25 February 2011

J. Z. Liu ,
D. S. Shen ,
P. Roca i Cabarrocas ,
H. Park  and
S. Wagner
J. Z. Liu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
D. S. Shen
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
P. Roca i Cabarrocas
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
H. Park
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We report the effect of thermal equilibration on the dark- and photo- conductivities of an un-doped a-Si,Ge:H,F with optical gap of 1.47 eV. Annealing at high temperature and subsequent quenching can freeze in the equilibrium configuration at the annealing temperature. The characteristic glass-like transition behavior of the conductivities was observed and used to estimate a freeze-in temperature of about 140°C. As the annealing temperature increases above the freeze-in temperature, the frozen-in dark- and photo- conductivities decrease, the photo- to dark- conductivity ratio increases, and the photoconductivity-generation rate exponent increases. These changes in conductivities are explained by a model calculation, which assumes that the quenching introduces new defect states to die lower energy flanks of the Gaussian defect distributions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 701
Copyright
Copyright © Materials Research Society 1990

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References

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