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Effect of Thermal Degradation on the Adhesion of Polyimide'Silicon Interface

Published online by Cambridge University Press:  22 February 2011

Y Z. Chu  and
C. J. Durning
Y Z. Chu
Affiliation:
Department of Chemical Engineering and Materials Science, Columbia University, New York, NY 10027
C. J. Durning
Affiliation:
Department of Chemical Engineering and Materials Science, Columbia University, New York, NY 10027
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Abstract

The object of this work is to identify the most important structure features in the bonding of polyimide/silicon during the curing anddegradation. An essential tool for this work is a quantitative adhesion measurement which can relate the macroscopic adhesion strength to the microscopic interfacial structures. We apply the blister test forthis purpose. In particular, the test is applied to examine the effect of thermal history on the adhesion of PMDA-ODA polyimide on siliconsurface. Our studies show that the test is accurate and sensitive. The adhesion data reveal that increases in adhesion strength coincide with the formation of certain thermal degradation products as revealedin the earlier thermal degradation studies. This suggests a mechanismfor increases in adhesion strength with curing temperature, based on chemical and physical modification of the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 587
Copyright
Copyright © Materials Research Society 1993

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References

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