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The Effect of the Oxide Interface on the Material and Electrical Properties of Polysilicon Contacts

Published online by Cambridge University Press:  26 February 2011

Dorothea E. Burk ,
Joseph W. Newkirk  and
Myung-Suk Jo
Dorothea E. Burk
Affiliation:
Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
Joseph W. Newkirk
Affiliation:
Major Analytical Instrumentation Center, University of Florida, Gainesville, FL 32611
Myung-Suk Jo
Affiliation:
Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
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Abstract

A strong correlation has been found between the electrical, compositional and structural properties of the polysilicon contact and its interface with the heavily doped pol isi 1-emitter of a transistor. The integrity and thickness of the oxide interface is a major factor for improving the observed performance. Transistors for which the polysilicon was also the diffusion source for the emitter were studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 761
Copyright
Copyright © Materials Research Society 1986

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References

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