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The Effect of The Initial Nucleation Temperature on The Misfit Dislocation Structure of InP-on-GaAs Heterostructures

Published online by Cambridge University Press:  25 February 2011

Ferenc Riesz ,
G. Radnoczi ,
B. Pecz ,
K. Rakennus ,
T. Hakkarainen ,
A. Pesek  and
K. Lischka
Ferenc Riesz
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, P. O. Box 76, H-1325 Budapest, Hungary
G. Radnoczi
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, P. O. Box 76, H-1325 Budapest, Hungary
B. Pecz
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, P. O. Box 76, H-1325 Budapest, Hungary
K. Rakennus
Affiliation:
Department of Physics, Tampere University of Technology, P. O. Box 692, SF-331Ø1 Tampere, Finland
T. Hakkarainen
Affiliation:
Department of Physics, Tampere University of Technology, P. O. Box 692, SF-331Ø1 Tampere, Finland
A. Pesek
Affiliation:
Institut für Experimentalphysik, Universität Linz, A-4Ø4Ø Linz, Austria
K. Lischka
Affiliation:
Forschungsinstitut für Optoelektronik, Universität Linz, A-4Ø4Ø Linz, Austria
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Abstract

The misfit dislocation structure of vicinal InP-on-GaAs heterostructures is studied by transmission electron microscopy (TEM). An island type growth is identified. The misfit stress is not fully relaxed at the interface. X-ray measurements on strain relaxation and epilayer misorientation are also reported, and the latter results are explained with the asymmetric introduction of 6Ø° dislocations at island edges. Comparing the results, it is concluded that x-ray data supply additional, although indirect, information on initial growth which is hardly detectable by TEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 461
Copyright
Copyright © Materials Research Society 1992

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References

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