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Effect of the Crystallographic Orientation of Underlying Poly-Si on the Thermal Stability of the TiSi2 Film

Published online by Cambridge University Press:  25 February 2011

Y. W. Kim ,
I. K. Kim ,
N. I. Lee ,
J. W. Ko ,
S. T. Ahn ,
M. Y. Lee  and
J. G. Lee
Y. W. Kim
Affiliation:
R&D Center, Samsung Electronics Co., Suwon P.O. Box #107, Korea.
I. K. Kim
Affiliation:
R&D Center, Samsung Electronics Co., Suwon P.O. Box #107, Korea.
N. I. Lee
Affiliation:
R&D Center, Samsung Electronics Co., Suwon P.O. Box #107, Korea.
J. W. Ko
Affiliation:
R&D Center, Samsung Electronics Co., Suwon P.O. Box #107, Korea.
S. T. Ahn
Affiliation:
R&D Center, Samsung Electronics Co., Suwon P.O. Box #107, Korea.
M. Y. Lee
Affiliation:
R&D Center, Samsung Electronics Co., Suwon P.O. Box #107, Korea.
J. G. Lee
Affiliation:
R&D Center, Samsung Electronics Co., Suwon P.O. Box #107, Korea.
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Abstract

The effect of the crystallographic orientation of underlying poly-Si film on the thermal stability of the TiSi2 film was studied. Different preferred orientations of the poly-Si film were obtained by annealing poly-Si or amorphous Si films at various temperatures. The TiSi2 film was formed by the solid-state reaction of the Ti film sputtered on the poly-Si film. The thermal stability of the TiSi2 film was evaluated by changes in the sheet resistance and microstructural evolution during furnace anneals. The TiSi2 film on poly-Si with the <110> preferred orientation shows more stable conductivity during high temperature anneals than with the <111> orientation. The surface energy of underlying poly-Si is expected to influence the thermal stability of the TiSi2/poly-Si structure significantly. Better thermal stability of the TiSi2 film can be obtained by the higher surface energy of underlying poly-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 599
Copyright
Copyright © Materials Research Society 1993

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References

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