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The Effect of Tensile Strain on AlGaAs/GaAsP Interdiffused Quantum Well Laser

Published online by Cambridge University Press:  10 February 2011

K. S. Chan  and
Michael C. Y. Chan
K. S. Chan
Affiliation:
City University of Hong Kong, Department of Physics and Materials Science, Kowloon, Hong Kong
Michael C. Y. Chan
Affiliation:
University of Hong Kong, Department of Electrical & Electronic Engineering, Pokfulam, Hong Kong
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Abstract

In this paper, we study the interdiffusion of tensile strained GaAsyPi.y /A10 33Ga0 67As single QW structures with a well width of 60Å. Different P concentrations in the as-grown well are chosen to obtain different tensile strains in the QW. Interdiffusion induces changes in the tensile strains and confinement potentials, which consequently change the valence band structure and the optical gain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 413
Copyright
Copyright © Materials Research Society 1998

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References

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