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The Effect of Strain Relaxation Mechanisms on the Electrical Properties of Epitaxial CaF2/Si(111) Heterostructures

Published online by Cambridge University Press:  10 February 2011

L. J. Schowalter ,
B. M. Kim ,
T. G. Thundat ,
Carl A. Ventrice Jr  and
V. P. LaBella
L. J. Schowalter
Affiliation:
Physics, Applied Physics and Astronomy Dept., Rensselaer Polytechnic Inst., Troy, NY 12180
B. M. Kim
Affiliation:
Physics, Applied Physics and Astronomy Dept., Rensselaer Polytechnic Inst., Troy, NY 12180
T. G. Thundat
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
Carl A. Ventrice Jr
Affiliation:
Physics, Applied Physics and Astronomy Dept., Rensselaer Polytechnic Inst., Troy, NY 12180
V. P. LaBella
Affiliation:
Physics, Applied Physics and Astronomy Dept., Rensselaer Polytechnic Inst., Troy, NY 12180
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Abstract

A new technique for growth of exactly two monolayers of CaF2 on Si(111) substrates is demonstrated. This technique takes advantage of the tendency of CaF2 to form thick islands at Si step edges on vicinal substrates once a two-monolayer thick wetting layer is deposited. A comparison of I-V characteristics for epitaxial CaF2 layers grown on on-axis versus off-axis substrates demonstrates the advantages of this technique. In addition, preliminary results for electron tunneling through the CaF2 structure is shown using the ballistic electron emission microscopy (BEEM) technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 21
Copyright
Copyright © Materials Research Society 1997

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References

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