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The Effect of Rapid Thermal Annealing on Heteroepitaxial Structures

Published online by Cambridge University Press:  28 February 2011

Julia M. Phillips ,
J. L. Batstone  and
L. Pfeiffer
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. Pfeiffer
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We present evidence on the types of structural changes caused by the rapid thermal annealing of two types of heteroepitaxial layers: CaF2/CoSi2/Si(111) and Si(100) on A12O3 (1102). We find that grains in a film can be merged into a single crystal and that the microtwin density can be dramatically lowered. We also find a number of changes in the structure of the heteroepitaxial interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 365
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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