Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T09:33:44.914Z Has data issue: false hasContentIssue false

The Effect of Porogen on Physical Properties in MTMS-BTMSE Spin-on Organosilicates

Published online by Cambridge University Press:  01 February 2011

B.R. Kim
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejeon Korea
J. M. Son
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejeon Korea
J.W. Kang
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejeon Korea
K.Y. Lee
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejeon Korea
K.K. Kang
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejeon Korea
M.J. Ko
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejeon Korea
D.W. Gidley
Affiliation:
University of Michigan, Department of Physics, Ann Arbor, MI. 48109
Get access

Abstract

Decreasing the circuit dimensions is driving the need for low-k materials with a lower dielectric constant to reduce RC delay, crosstalk, and power consumption. In case of spin-on organosilicate low-k films, the incorporation of a porogen is regarded as the only foreseeable route to decrease dielectric constant of 2.2 or below by changing a packing density. In this study, MTMS-BTMSE copolymers that had superior mechanical properties than MSSQ were blended with decomposable polymers as pore generators. While adding up to 40 wt % porogen into MTMS:BTMSE=100:50 matrix, optical, electrical, and mechanical properties were measured and the pore structure was also characterized by PALS. The result confirmed that there existed a tradeoff in attaining the low dielectric constant and desirable mechanical strength, and no more pores than necessary to achieve the dielectric objective should be incorporated. When the dielectric constant was fixed to approximately 2.3 by controlling BTMSE and porogen contents simultaneously, the thermo-mechanical properties of the porous films were also investigated for the comparison purpose. Under the same dielectric constant, the increase in BTMSE and porogen contents led to improvement in modulus measured by the nanoindentation technique but deterioration of adhesion strength obtained by the modified edge lift-off test.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA (2003).Google Scholar
2. Kim, B.R., Kang, J.W., Lee, K.Y., Son, J.M., and Ko, M.J., submitted.Google Scholar
3. Tompkins, H.G., A User's guide to Ellipsometry, Academic Press, Boston, 1993.Google Scholar
4. Gidley, D.W., Frieze, W.E., Dull, T.L., Sun, J., Yee, A.F., Nguyen, C.V., and Yoon, D.Y., Applied Physics letters, 76, p1282, 2000.Google Scholar
5. Sun, J.N., Hu, Y.F., Freize, W.E., and Gidley, D.W., Radiation Physics and Chemistry 68, p345, 2003.Google Scholar
6. Dull, T.L., Frieze, W.E., Gidley, D.W., Sun, J.N., Yee, A.F., Journal of Physical Chemistry Part B, 105, p4657, 2001.Google Scholar
7. Oliver, W.C. and Pharr, G. M., J. Mat. Res., 7, p1564, 1992.Google Scholar
8. Shaffer, E.O. II , Mcgarry, F.J., and Hoang, L., Polymer Eng. Sci., 36, p2375, 1996.Google Scholar