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The Effect of Photoexcitation on Formation of Radiation Defects in Si

Published online by Cambridge University Press:  26 February 2011

V. N. Mordkovich ,
A. B. Danilin ,
Yu. N. Erokhin  and
S. N. Boldyrev
V. N. Mordkovich
Affiliation:
Institute of Microelectronics Technology and High Purity Materials USSR Academy of Sciences, 142432, Chernogolovka, Moscow rgn., USSR
A. B. Danilin
Affiliation:
Institute of Microelectronics Technology and High Purity Materials USSR Academy of Sciences, 142432, Chernogolovka, Moscow rgn., USSR
Yu. N. Erokhin
Affiliation:
Institute of Microelectronics Technology and High Purity Materials USSR Academy of Sciences, 142432, Chernogolovka, Moscow rgn., USSR
S. N. Boldyrev
Affiliation:
Institute of Microelectronics Technology and High Purity Materials USSR Academy of Sciences, 142432, Chernogolovka, Moscow rgn., USSR
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Abstract

Photoexcitation of the Si electronic subsystem during ion implantation was found to be able to control radiation damage accumulation. Conditions when additional light illumination during ion bombardment suppresses radiation defect formation are determined. The model of effect observed taking into account recombination of nonequilibrium electron and holes is proposed. Coefficient between the change in amount of damage accumulated and the rate of nonequilibrium charge carriers generation is estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 477
Copyright
Copyright © Materials Research Society 1991

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