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The Effect of Oxygen on Adhesion of Thin Copper Films to Silicon Nitride

Published online by Cambridge University Press:  01 February 2011

Mengzhi Pang ,
Monika Backhaus-Ricoult  and
Shefford P. Baker
Mengzhi Pang
Affiliation:
Cornell University, Department of Materials Science and Engineering Ithaca, NY 14853, U.S.A.
Monika Backhaus-Ricoult
Affiliation:
Cornell University, Department of Materials Science and Engineering Ithaca, NY 14853, U.S.A.
Shefford P. Baker
Affiliation:
Cornell University, Department of Materials Science and Engineering Ithaca, NY 14853, U.S.A.
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Abstract

The effect of oxygen on adhesion and chemistry at interfaces between Cu thin films and SiNx barrier layers on Si substrates was investigated. Films were deposited in an ultra-high-vacuum sputter deposition chamber with good control of oxygen content. Adhesion was measured using a high throughput driver film method. Microstructure and bonding were investigated using transmission electron microscopy and electron energy loss spectroscopy, respectively, on sample cross sections. For films to which a small amount of oxygen was added during deposition, oxygen segregated to Cu/SiNx interfaces during thermal cycling, where it induced charge transfer and the presence of Cu+ interfacial states, and significantly reduced the work of adhesion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U3.6
Copyright
Copyright © Materials Research Society 2004

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References

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