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Effect of Oxygen Exposure and Deposition Environment on Thermal Stability of Ta Barriers To Cu Penetration.

Published online by Cambridge University Press:  25 February 2011

N.A. Bojarczuk ,
L.A. Clevenger ,
K. Holloway ,
J.M.E. Harper ,
C. Cabral ,
R.G. Schad  and
L. Stolt
N.A. Bojarczuk
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
L.A. Clevenger
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
K. Holloway
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
J.M.E. Harper
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
C. Cabral
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
R.G. Schad
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

The effect of deposition pressure and controlled oxygen dosing on the diffusion barrier performance of thin film Ta to Cu penetration was investigated. In-situ resistivity, Auger compositional profiling, scanning electron microscopy and cross-sectional transmission electron microscopy were used to determine the electrical, chemical and structural changes that occur in Cu/Ta bilayers on Si upon heating. A 20 nm Ta barrier allowed the penetration of Cu at temperatures ranging from 320 to 630°C depending on processing conditions. Barrier failure temperature is dependent upon the deposition pressure and oxygen contamination at the Ta/Cu interface. This indicates the importance of understanding how deposition conditions affect diffusion barrier performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 387
Copyright
Copyright © Materials Research Society 1991

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References

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