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Effect of Morphological Change on Unipolar and Bipolar Switching Characteristics in Pr0.7Ca0.3MnO3 Based RRAM

Published online by Cambridge University Press:  27 February 2015

Neeraj Panwar ,
Pankaj Kumbhare ,
Ajit K. Singh ,
N. Venkataramani  and
Udayan Ganguly
Neeraj Panwar
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
Pankaj Kumbhare
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
Ajit K. Singh
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
N. Venkataramani
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
Udayan Ganguly
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
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Abstract

We have demonstrated that pulsed laser deposition (PLD) conditions, i.e. O2 partial pressure (pO2) and temperature (T), enable control over the polarity of resistance switching in PCMO (Pr0.7C0.3MnO3) i.e. unipolar resistive switching (URS) vs. bipolar resistive switching (BRS). We observe by detailed physical characterization that BRS occurs in poly-crystalline thin films while URS is seen in amorphous films – indicating the materials origin of URS vis-a-vis BRS. BRS shows attractive lower voltage operation, no forming and lower variability than URS.

Keywords

laser ablationmemorythin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 47 - 52
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Raghavan, N., Pay, K. L., Li, X., Liu, W. H., Wu, X., Bosman, M., Kauerauf, T., IEEE Electron Device Lett., 32, 6, 716, (2011).CrossRefGoogle Scholar
Mandapati, R., Borkar, A. S., Srinivasan, V. S. S., Bafna, P., Karkare, P., Lodha, S., and Ganguly, U., IEEE Trans. Electron Dev.,60, 10, 3385, (2013).CrossRefGoogle Scholar
Yu, S., Guan, X. and Wong, H. S. P., IEDM, 413, (2011).Google Scholar
Seong, D., Park, J., Lee, N., Hasan, M., Jung, S., Choi, H., Lee, J., Jo, M., Lee, W., Park, S., Kim, S., Jang, Y. H., Lee, Y., Sung, M., Kil, D., Hwang, Y., Chung, S., Hong, S., Roh, J., and Hwang, H., IEDM, 101, (2009).Google Scholar
Jung, S., Siddik, M., Lee, W., Park, J., Liu, X., Woo, J., Choi, G., Lee, J., Lee, N., Jang, Y. H., and Hwang, H., IEDM, 59, (2011).Google Scholar
Asanuma, S., Akoh, H., Yamada, H. and Sawa, A., Phys. Rev. B, 80, 235113, (2009).CrossRefGoogle Scholar
Lee, H. S., Choi, S. G., Park, H. H. and Rozenberg, M. J., Sci. Rep.,3, 1704, (2013).CrossRefGoogle Scholar
Panwar, N., Rao, G., Raju, N. R. C., Nori, R., Kumbhare, P., Deshmukh, S., Srinivasan, V. S. S., Venkataramani, N. and Ganguly, U. MRS Fall, mrsf12-1507-AA-09-27, Boston, (2013).CrossRefGoogle Scholar
Li, S. L., Li, J., Zhang, Y., Zheng, D. N. and Tsukagoshi, K., Appl. Phys. A, 103, 21, (2011).CrossRefGoogle Scholar
Seong, T. G., Lee, B. S., Choi, K. B., Kweon, S. H., Kim, B. Y., Jung, K., Moon, J. W., Lee, K. J., K. H. and Nahm, S., Curr. Appl Phys., 14, 538, (2014).CrossRefGoogle Scholar
Iliev, M. N., Abrashev, M. V., Lee, H. G., Popov, V. N., Sun, Y. Y., Thomsen, C., Meng, R. L. and Chu, C. W., Phys. Rev. B., 57, 5, 2872, (1998).CrossRefGoogle Scholar
Iliev, M. N., Abrashev, M. V., Laverdiere, J., Jandl, S., Gospodinov, M. M., Wang, Y. Q., and Sun, Y.Y., http://arxiv.org/abs/cond-mat/0510198, (2005).Google Scholar
Podobedov, V. B., Romero, D. B., Weber, A., Rice, J. P., Shreekala, R., Rajeswari, M., Ramesh, R., Venkatesan, T., and Drew, H. D., Appl. Phys. Lett.,73, 22, 3217, (1998).CrossRefGoogle Scholar
Kim, I., Siddik, M., Shin, J., Biju, K. P., Jung, S. and Hwang, H., Appl. Phys. Lett., 99, 042101, (2011).CrossRefGoogle Scholar
Julien, C., Massot, M., Rangan, S., Lemal, M. and Guyomard, D., J. Raman Spectrosc., 33, 223, (2002).CrossRefGoogle Scholar