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Effect of Low Power Deposition and Low Oxidation Temperature on the Interfacial and Structural Properties of sputtered HfO2 Gate Dielectrics

Published online by Cambridge University Press:  25 April 2012

Auxence Minko ,
Gustavo S. Belo ,
Sergei Rudenja  and
Douglas A. Buchanan
Auxence Minko
Affiliation:
Electrical & Computer Engineering Department, University of Manitoba, 75 Chancellors circle, Winnipeg, MB R2H0C6, Canada.
Gustavo S. Belo
Affiliation:
Electrical & Computer Engineering Department, University of Manitoba, 75 Chancellors circle, Winnipeg, MB R2H0C6, Canada.
Sergei Rudenja
Affiliation:
Department of Chemistry, 144 Dysart Rd, Parker Building, University of Manitoba, Winnipeg, MB R3T 2N2 Canada.
Douglas A. Buchanan
Affiliation:
Electrical & Computer Engineering Department, University of Manitoba, 75 Chancellors circle, Winnipeg, MB R2H0C6, Canada.
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Abstract

Hafnium dioxide gate dielectrics, prepared by DC magnetron with low-power sputtering deposition followed by a low-temperature thermal oxidation, show greatly improved interfacial and electrical properties. Ellipsometry and X-ray photoelectron spectroscopy (XPS) measurements show a good stoichiometric HfO2 thin films with a refractive index of 1.9 and an Hf:O ratio of 1:2. The results obtained after analysis, quantification and calculation through XPS depth profile method, angle resolved XPS and interface modeling by XPS data processing software suggest a development of a complex three layer dielectric stack, including hafnium dioxide layer, a narrow interface of hafnium silicate and broad region of oxygen diffusion into silicon wafer. The measured dielectric constant of the HfO2 was about 22. The film band-gap was found to be ∼ 5.2 eV.

Keywords

dielectric propertiessputteringmicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1394: Symposium M – Oxide Semiconductors–Defects, Growth and Device Fabrication , 2012 , mrsf11-1394-m04-10
Copyright
Copyright © Materials Research Society 2012

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References

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