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Effect of Light-Soaking on the Density of States and Carrier Dynamics of a-Si1-xGex:H Alloys

Published online by Cambridge University Press:  21 February 2011

Thomas Unold ,
J. David Cohen  and
Charles M. Fortmann
Thomas Unold
Affiliation:
Dept. of Physics, University of Oregon, Eugene, OR 97403
J. David Cohen
Affiliation:
Dept. of Physics, University of Oregon, Eugene, OR 97403
Charles M. Fortmann
Affiliation:
Inst. of Energy Conversion, University of Delaware, Newark, DE.
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Abstract

We have used transient and steady-state junction capacitance methods to gain information about the density of states in the mobility gap of silicon-germanium alloys a-Si1-xGex:H (0.25<×<1.0). With those measurements we are also able to differentiate between minority and majority carrier processes in the alloys. We find that the (μτ)p is considerably reduced from its value in a-Si:H, even for films with small germanium concentrations (x=0.25). The density of states deduced from the optical spectra shows two distinct features above and below midgap for all concentrations, which both increase with light-soaking. Light-soaking also sharply reduces the (μτ)p.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 499
Copyright
Copyright © Materials Research Society 1992

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References

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