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Effect of Lattice Strain on Growth Mechanisms and Electrical Transport Behavior of Epitaxial CaRuO3 Thin Films

Published online by Cambridge University Press:  15 February 2011

C. B. Eom ,
R. A. Rao ,
Q. Gan ,
R. J. Cava ,
J. J. Krajewski ,
Y. Suzuki ,
S. C. Gausepohl  and
M. Lee
C. B. Eom
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708
R. A. Rao
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708
Q. Gan
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708
R. J. Cava
Affiliation:
Princeton Materials Institute, Princeton University, Princeton, NJ
J. J. Krajewski
Affiliation:
Bell Laboratories/Lucent Technology, Murray Hill, NJ
Y. Suzuki
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY
S. C. Gausepohl
Affiliation:
Department of Physics, University of Virginia, VA 22903
M. Lee
Affiliation:
Department of Physics, University of Virginia, VA 22903
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Abstract

We have observed both metallic and semiconducting behavior in epitaxial thin films of the metallic oxide CaRuO3 deposited under identical conditions on (100) SrTiO3 substrates of varying crystalline quality. X-ray diffraction studies showed that while semiconducting films with enlarged unit cells were obtained on single crystal SrTiO3 substrates, metallic films with lattice parameters close to the bulk material grew on poor crystalline quality SrTiO3 substrates. The films deposited on (100) LaAlO3 substrates consistently showed metallic behavior. Atomic force microscope images suggest that the semiconducting films had a coherent two dimensional nucleation. In contrast, three dimensional island-like incoherent growth was seen in the metallic films. It is believed that in the coherent films a strain induced substitution of the small Ru4+ cations by the larger Ca2+ cations occurs, breaking the conduction pathway within the three dimensional network of the RUO6 octahedra and leading to a metal-insulator transition. This unique phenomenon - which is not observed in bulk material - can be significant in technologically important epitaxial perovskite oxide heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 474: Symposium L – Epitaxial Oxide Thin Films III , 1997 , 199
Copyright
Copyright © Materials Research Society 1997

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References

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