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The Effect of Ion Implantation on the Interdiffusion in Si/Ge Amorphous Artificial Multilayers

Published online by Cambridge University Press:  25 February 2011

B. Park ,
F. Spaepen ,
J. M. Poate ,
F. Priolo ,
D. C. Jacobson ,
C. S. Pai ,
A. E. White  and
K. T. Short
B. Park
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
F. Spaepen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
J. M. Poate
Affiliation:
AT&T Bell Laboratories, 600 Mountain Road, Murray Hill, NJ 07974
F. Priolo
Affiliation:
AT&T Bell Laboratories, 600 Mountain Road, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Road, Murray Hill, NJ 07974
C. S. Pai
Affiliation:
AT&T Bell Laboratories, 600 Mountain Road, Murray Hill, NJ 07974
A. E. White
Affiliation:
AT&T Bell Laboratories, 600 Mountain Road, Murray Hill, NJ 07974
K. T. Short
Affiliation:
AT&T Bell Laboratories, 600 Mountain Road, Murray Hill, NJ 07974
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Abstract

Amorphous Si/Ge artificial multilayers have been implanted with Si and B at liquid nitrogen temperature, and partially ion mixed with Ar at different temperatures. In all cases, the square of the mixing length was found to be proportional to the dose. Annealing of Si-implanted samples showed that after relaxation the diffusivity appeared unaffected by the implantation process. Annealing of the B-implanted samples showed an enhancement of the diffusivity at the higher dose. The diffusive component of the square of the mixing length in the Ar-ion mixed samples has an Arrhenius-type temperature dependence, with an activation enthalpy of 0.22 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 173
Copyright
Copyright © Materials Research Society 1988

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References

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