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The Effect of Implant and Rapid Thermal Annealing Temperatures on Ion Beam Mixing of Titanium Silicide

Published online by Cambridge University Press:  25 February 2011

G. A. Mattiussi ,
J. L. Whitton ,
A. A. Naem  and
V. Q. Ho
G. A. Mattiussi
Affiliation:
Queen's University, Kingston, Ontario, Canada
J. L. Whitton
Affiliation:
Queen's University, Kingston, Ontario, Canada
A. A. Naem
Affiliation:
Northern Telecom Electronics Limited, Ottawa, Ontario, Canada
V. Q. Ho
Affiliation:
Northern Telecom Electronics Limited, Ottawa, Ontario, Canada
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Abstract

Ion beam mixing has been used to form layers of titanium disilicide on Si wafers. Doses of Ge+ up to 1×1016 ions/cm2 were implanted at 140 keV through 51 nm of sputtered Ti. The substrate was held at different temperatures; 150°C, 300°C and 400°C. In addition, some samples were processed without temperature control. Two rapid thermal annealing cycles were used, 800°C for 10 s and 650°C for 50 s in an N2 ambient to form stoichiometric TiSi2. As-implanted samples showed an increase in the number of mixed Ti and Si atoms with higher implant temperature and larger dose. In addition, a thin layer with a Ti/Si ratio of 1:1 as seen in some samples indicating possible TiSi phase formation. Lower implant temperatures, higher doses and higher anneal temperatures all produced greater TiSi2 thicknesses. Ion beam mixing yields thicker. silicide layers than those formed without mixing. The silicide interface smoothness was improved by ion beam mixing although some residual implant damage was observed after annealing. The implanted Ge+ accumulated below the silicide/Si interface and in the surface Ti oxide layer.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 323
Copyright
Copyright © Materials Research Society 1987

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References

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