Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-07T21:16:08.305Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Fast Electron Irradiation on Electrical and Optical Properties of CdGeAs2 and ZnGep2

Published online by Cambridge University Press:  10 February 2011

I. Zwieback ,
J. Maffetone ,
D. Perlov ,
J. Harper ,
W. Ruderman ,
K. Bachmann  and
N. Dietz
I. Zwieback
Affiliation:
INRAD Inc., Northvale, NJ
J. Maffetone
Affiliation:
INRAD Inc., Northvale, NJ
D. Perlov
Affiliation:
INRAD Inc., Northvale, NJ
J. Harper
Affiliation:
INRAD Inc., Northvale, NJ
W. Ruderman
Affiliation:
INRAD Inc., Northvale, NJ
K. Bachmann
Affiliation:
North Carolina State University, Raleigh, NC
N. Dietz
Affiliation:
North Carolina State University, Raleigh, NC
Get access

Abstract

We report on the effects of fast electron irradiation on the optical absorption (α) of CdGeAs2and ZnGeP2 and on the electrical properties of CdGeAs2. In p-CdGeAs2 irradiation led to the reduction in α and an increase in the electrical resistivity. The lowest values of α (about 0.1 cm' at 5µm<λ<10µm) were obtained on irradiated crystals of p-type with the highest degree of compensation. Further accumulation of the electron dose caused conversion to n-type and deterioration of the optical transmission. In ZnGeP2 irradiation caused a decrease in a at λ>0.85 λm and increase in α at λ<0.85 μm. At λ=2.05 μm, α for the o-ray could be reduced to less than 0.08 cm−1. At higher doses, saturation in α was observed. The effects of irradiation are discussed in connection with possible mechanisms of optical absorption in CdGeAs2 and ZnGeP2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 409
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Dmitriev, V.G., Gurzadyan, G.G., and Nikogosyan, D.N., Handbook of Nonlinear Optical Crystals, 2nd ed. (Springer-Verlag, 1997), p. 136, 176.Google Scholar
[2] Rud, Yu.V. and Masagutova, R.V., Sov. Tech. Phys. Lett., 7, 72 (1981).Google Scholar
[3,4] Dovletmuradov, Ch. et al. , Izv. AN Turkmen SSR, Ser.Fiz.-Tekh.,3, p. 106 (1972).Google Scholar
[5] Chng, L.L., Technical Report, DERA/EL/EOMC/TR990046/1.0, Malvern, UK (1999).Google Scholar
[6] Zwieback, I. and Ruderman, W., NSF Phase I Final Report, DMI-9461802, INRAD, (1995).Google Scholar
[7] Zwieback, I., Maffetone, J. and Ruderman, W., 1st Workshop The Control of Stoichiometry in Semiconductor Heterostructures, Suhl, Germany, August 1995 (unpublished).Google Scholar
[8] Borshchevsky, A.S., Route, R.K., and Feigelson, R.S., Mat. Res Bull., 15, 409 (1980).Google Scholar
[9] Brudnyi, V.N., Budnitskii, D.L., Krivov, M.A., Masagutova, R.V., Prochukhan, V.D. and Rud, Yu.V., Phys. Stat. Sol. A, 50, 379 (1978).Google Scholar
[10,11] Dietz, N. et al. , Appl. Phys. Lett. 65, 2759 (1994)Google Scholar
[12,13] Halliburton, L.E. et al. and Giles, N.C. et al. , Appl. Phys. Lett., 66, 1758, 2670 (1995).Google Scholar
[14] Setzler, S.D., Giles, N.C., Halliburton, L.E., Schunemann, P.G. and Pollak, T.M., Appl. Phys. Lett., 74, 1218 (1999).Google Scholar
[16] Krivov, M. A. et al. , Fiz. Tekh. Poluprov. 9, 1211 (1975) 10, 1311 (1976).Google Scholar
[17,18] Brudnyi, V. N. et al. , Phys. Stat. Sol. A, 35, 425 (1976), 49, 761 (1978).Google Scholar
[19] Watkins, G. D. in Radiation Damage in Semiconductors, ed. Baruch, P., Dunod, Paris, 1965.Google Scholar
[20] Kildal, H., Technical Report AFML-TR-72-277, 1972, Phys. Rev., B10, 5083 (1974).Google Scholar
[21] Zwieback, I., Perlov, D., Maffetone, J. and Ruderman, W., Appl. Phys. Lett., 73, 2185 (1998).Google Scholar