Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-28T12:47:35.206Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Dielectric Capping Layer on TDDB Lifetime of Cu Interconnects in SiOF

Published online by Cambridge University Press:  31 January 2011

Jeff Gambino ,
Fen Chen ,
Steve Mongeon ,
Phil Pokrinchak ,
John He ,
Tom C. Lee ,
Mike Shinosky  and
Dave Mosher
Jeff Gambino
Affiliation:
[email protected], IBM, Essex Junction, Vermont, United States
Fen Chen
Affiliation:
[email protected], IBM, Essex Junction, Vermont, United States
Steve Mongeon
Affiliation:
[email protected], IBM, Essex Junction, Vermont, United States
Phil Pokrinchak
Affiliation:
[email protected], IBM, Essex Junction, Vermont, United States
John He
Affiliation:
[email protected], IBM, Essex Junction, Vermont, United States
Tom C. Lee
Affiliation:
[email protected], IBM, Essex Junction, Vermont, United States
Mike Shinosky
Affiliation:
[email protected], IBM, Essex Junction, Vermont, United States
Dave Mosher
Affiliation:
[email protected], IBM, Essex Junction, Vermont, United States
Get access

Abstract

In this study, intralevel dielectric breakdown is studied for copper interconnects in an SiOF dielectric, capped with either SiN or SiCN. The leakage current is higher and the failure time of dielectric breakdown is shorter for an SiCN capping layer compared to an SiN capping layer. It is proposed that the dielectric breakdown of the integrated structure is limited by the interface between the capping layer and the SiOF dielectric. Lower lifetime for dielectric breakdown is observed for structures with an SiCN cap compared to structures with an SiN cap, due to higher leakage current in the SiCN. The higher leakage for an SiCN cap is consistent with results from planar metal-insulator-semiconductor capacitors.

Keywords

dielectric propertiesCumicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1156: Symposium D – Materials, Processes and Reliability for Advanced Interconnects for Micro-and Nanoelectronics–2009 , 2009 , 1156-D06-08
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Edelstein, D. Heidenreich, J. Goldblatt, R. Cote, W. Uzoh, C. Lustig, N. Roper, P. McDevitt, T., Motsiff, W. Simon, A. Dukovic, J. Wachnik, R. Rathore, H. Schulz, R. Su, L. Luce, S., Slattery, J. IEDM Proc., 1997, p. 773.Google Scholar
2 Edelstein, D. Davis, C. Clevenger, L. Yoon, M. Cowley, A. Nogami, T. Rathore, H. Agarwala, B., Arai, S. Carbone, A. Chanda, K. Cohen, S. Cote, W. Cullinan, M. Dalton, T. Das, S., Davis, P. Demarest, J. Dunn, D. Dziobkowski, C. Filippi, R. Fitzsimmons, J. Flaitz, P. Gates, S. Gill, J. Grill, A. Hawken, D. Ida, K. Klaus, D. Klymko, N. Lane, M. Lane, S. Lee, J. Landers, W. Li, W.-K., Lin, Y.-H., Liniger, E. Liu, X.-H., Madan, A. Malhotra, S. Martin, J. Molis, S., Muzzy, C. Nguyen, D. Nguyen, S. Ono, M. Parks, C. Questad, D. Restaino, D. Sakamoto, A., Shaw, T. Shimooka, Y. Simon, A. Simonyi, E. Tempest, S. Kleeck, T. Van, Vogt, S., Wang, Y.-Y., Wille, W. Wright, J. Yang, C.-C., Ivers, T. IITC Proc., 2004, p. 214.Google Scholar
3 Matz, L.M. Tsui, T. Engbrecht, E.R. Taylor, K. Haase, G. Ajmera, S. Kuan, R. Griffin, A. Kraft, R., McKerrow, A. AMC 2005 Proc., MRS, 2006, p. 437.Google Scholar
4 Noguchi, J. Ohashi, N. Jimbo, T. Yamaguchi, H. Takeda, K. Hinode, K. IEEE Trans. Elec. Dev., 48, 1340 (2001).Google Scholar
5 Ngwan, V.C. Zhu, C. Krishnamoorthy, A. Thin Sol. Films, 462-463, 321 (2004).Google Scholar
6 Stamper, A.K. Baks, H. Cooney, E. Gignac, L. Gill, J. Hu, C.-K., Kane, T. Liniger, E. Wang, Y.-Y., Wynne, J. AMC Proc., 2005, MRS, 2006, p. 727.Google Scholar
7 Gambino, J. McDevitt, T.L. Anderson, F.P. Gill, J. Mongeon, S.A. Burnham, J. AMC 2006 Proc., MRS, 2007, p. 501.Google Scholar
8 Krishnamoorthy, A. Huang, N.Y. Chong, S.-Y., in Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics – 2003, MRS, vol. 766, 2003, p. 83.Google Scholar
9 Tsui, T.Y. Willecke, R. McKerrow, A.J. IITC Proc., 2003, p. 45.Google Scholar
10 Aoki, H. Torii, K. Oshima, T. Noguchi, J. Tanaka, U. Yamaguchi, H. Saito, T. Miura, N. Tamaru, T., Konishi, N. Uno, S. Morita, S. Fujii, T. Hinode, K. IEDM Proc., 2001, p. 76.Google Scholar
11 Stamper, A.K. Adams, C. Chen, X. Christiansen, C. Cooney, E. Cote, W. Gambino, J. Gill, J. Luce, S. McDevitt, T. Porth, B. Spooner, T. Winslow, A. Wistrom, R. AMC 2002 Proc., MRS, 2003, p. 485.Google Scholar
12 Sundararajan, S. Trivedi, M. US. Pat. # 6,444,568, 2002.Google Scholar
13 Chen, F. Bravo, O. Chanda, K. McLaughlin, P. Sullivan, T. Gill, J. Lloyd, J. Kontra, R. Aitken, J., IRPS Proc., 2006, p. 46.Google Scholar
14 Chen, F. Li, B. Lee, T. Christiansen, C. Gill, J. Angyal, M. Shinosky, M. Burke, C. Hasting, W., Austin, R. Sullivan, T. Badami, D. Aitken, J. IPFA Proc., 2006, p. 97.Google Scholar
15 Lloyd, J.R. Liniger, E. Shaw, T.M. J. Appl. Phys., 98, 2005, p. 084109.Google Scholar