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Effect of Copper-Induced Recrystallization on the Piezoresistivity of Germanium Films

Published online by Cambridge University Press:  10 February 2011

A. Khakifirooz ,
S. S. Mohajerzadeh ,
S. Haji  and
E. Asl Soleimani
A. Khakifirooz
Affiliation:
ECE Deparmment, University of Tehran, Tehran 14399, IRAN, [email protected]
S. S. Mohajerzadeh
Affiliation:
ECE Deparmment, University of Tehran, Tehran 14399, IRAN
S. Haji
Affiliation:
ECE Deparmment, University of Tehran, Tehran 14399, IRAN
E. Asl Soleimani
Affiliation:
ECE Deparmment, University of Tehran, Tehran 14399, IRAN
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Abstract

Effect of copper-induced recrystallization on the piezoresistivity of germanium films is reported. SEM and XRD are used to study the crystalline structure of the films, while RBS, PIXE, and EDX are utilized to investigate their composition. Significant grain growth is observed in Ge films, upon annealing a Cu/Ge bilayer at 400°C for 30 minutes. Also a dominant orientation of Ge(111) is observable when amorphous precursor films are used. Hall measurements and cantilever beam bending show a considerable increase in hole mobility and longitudinal gauge factor, respectively

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 255
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1 Doyle, J.P., Svensson, B. G., Johansson, S., Appl. Phys. Lett., 67(19), 2804–2806 (1995).Google Scholar
2 Fan, J.C. C. and Anderson, C. H., J. Appl. Phys., 52, 4003 (1981).Google Scholar
3 Belu-Marian, A., Candet, E., Devenyi, A., in Thin Film Resistive Sensors, edited by Ciureanu, P. and Middelhoek, S. (IOP Publishing, London, 1992) pp. 113–213.Google Scholar
4 French, P.J. and Evans, A. G. R., Solid-State Electron., 32(1), 1–10 (1989).Google Scholar
5 Liu, G. and Fonash, S. J., Appl. Phys. Lett., 62(20), 2554 (1993).Google Scholar
6 Lee, S.W. and Joo, S.K., IEEE Electron Device Lett., 17, 160–162 (1996).Google Scholar
7 Bhat, G.A., Jin, Z., Kwok, H.S., Wong, M., IEEE Electron Device Lett., 20, 97–99 (1999).Google Scholar
8 Joshi, A.R. and Saraswat, K.C., presented at 196th Electrochemical Society Meeting, Honolulu, Hawaii (1999).Google Scholar
9 Khakifirooz, A., Haji, S., Mohajerzadeh, S. S., to be presented at E-MRS 2000.Google Scholar