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The effect of chemical treatment on porous silicon: the role of alcohol

Published online by Cambridge University Press:  11 February 2011

Masato Ohmukai ,
Mei Honda ,
Yumiko Kodama ,
Hiroshi Tsunekuni  and
Yasuo Tsutsumi
Masato Ohmukai
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674–8501, Japan
Mei Honda
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674–8501, Japan
Yumiko Kodama
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674–8501, Japan
Hiroshi Tsunekuni
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674–8501, Japan
Yasuo Tsutsumi
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674–8501, Japan
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Abstract

We investigated the effect of the chemical etching on light-emitting porous silicon. It is well known that the treatment with the mixture of HF acid and ethanol noticeably enhances photoluminescent efficiency but the mechanism is not clarified yet. We found that ethanol plays a key role to oxidize silicon hydride species that dissolves with the aid of HF acid. In addition, the chemical treatment with methanol or propanol instead of ethanol gave the same result.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.9
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Fauchet, P. M., in “Light Emission in Silicon From Physics to Devices” Academic Press, New York, 1998 pp. 205–252.Google Scholar
[2] Uehara, N., et al.: Mater. Res. Soc. Symp. Proc. 560 157 (1999).Google Scholar
[3] Kato, Y., et al.: Jpn. J. Appl. Phys. 27 L1406 (1988).Google Scholar
[4] Ogata, Y., et al.: J. Electrochem. Soc. 142 195 (1995).Google Scholar
[5] Ogata, Y., et al.: J. Electrochem. Soc. 142 1595 (1995).Google Scholar
[6] Tsai, C. et al.: Appl. Phys. Lett. 59 2814 (1991).Google Scholar
[7] Tsai, C. et al.: Appl. Phys. Lett. 60 1700 (1992).Google Scholar
[8] Lavine, J. M. et al.: Appl. Phys. Lett 62 1099 (1993).Google Scholar