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Effect of CH4 Plasma Treatment on O2 Plasma Ashed Organosilicate Low-k Dielectrics

Published online by Cambridge University Press:  01 February 2011

Hualiang Shi ,
Junjing Bao ,
Junjun liu ,
Huai Huang ,
Paul S. Ho ,
Michael D Goodner ,
Mansour Moinpour  and
Grant M Kloster
Hualiang Shi
Affiliation:
[email protected], The University of Texas at Austin, Laboratory for Interconnect and Packaging, PRC, Bldg. 160,, 10100 Burnet Road, Austin, TX, 78758, United States, 512-471-8966, 512-471-8969
Junjing Bao
Affiliation:
[email protected], The University of Texas at Austin, Laboratory for Interconnect and Packaging, Microelectronics Research Center,, PRC, Bldg. 160, 10100 Burnet Road, Austin, TX, 78758, United States
Junjun liu
Affiliation:
[email protected], The University of Texas at Austin, Laboratory for Interconnect and Packaging, Microelectronics Research Center, PRC, Bldg. 160, 10100 Burnet Road,, Austin, TX, 78758, United States
Huai Huang
Affiliation:
[email protected], The University of Texas at Austin, Laboratory for Interconnect and Packaging, Microelectronics Research Center, PRC, Bldg. 160, 10100 Burnet Road,, Austin, TX, 78758, United States
Paul S. Ho
Affiliation:
[email protected], The University of Texas at Austin, Laboratory for Interconnect and Packaging, Microelectronics Research Center, PRC, Bldg. 160, 10100 Burnet Road,, Austin, TX, 78758, United States
Michael D Goodner
Affiliation:
[email protected], Intel Corporation, Logic Technology Development, Hillsboro, OR, 97124, United States
Mansour Moinpour
Affiliation:
[email protected], Intel Corporation, Logic Technology Development, Hillsboro, OR, 97124, United States
Grant M Kloster
Affiliation:
[email protected], Intel Corporation, Logic Technology Development, Hillsboro, OR, 97124, United States
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Abstract

During an O2 plasma ashing process, carbon depletion and subsequent moisture uptake caused increase of keff and the leakage current in an organosilicate (OSG) low-k dielectric. For dielectric restoration, additional CH4 plasma treatment on the O2 plasma ashed OSG low-k dielectric was investigated using angle resolved x-ray photoelectron spectroscopy (ARXPS), XPS depth profiling, x-ray reflectivity (XRR), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and contact angle goniometer. After CH4 plasma treatment on the O2 plasma ashed OSG, the surface carbon concentration and surface hydrophobicity were partially recovered. A dense surface layer containing C=C bonds was found to have formed on the top of the damaged OSG. The C-V hysteresis and the leakage current were reduced as a result of the CH4 plasma treatment. XPS depth profiling revealed that the recovery effect was limited to the surface region.

Keywords

dielectricx-ray photoelectron spectroscopy (XPS)Raman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B03-12
Copyright
Copyright © Materials Research Society 2007

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References

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