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Effect of Cerium Silicate Formation on the Structural and Electrical Properties of Pt/SrBi2Ta2O9/CeO2/Si Capacitors

Published online by Cambridge University Press:  10 February 2011

Ho Nyung Lee ,
Dong Suk Shin ,
Yong Tae Kim  and
Sung Ho Chow
Ho Nyung Lee
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 130-650, Korea
Dong Suk Shin
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 130-650, Korea
Yong Tae Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 130-650, Korea
Sung Ho Chow
Affiliation:
Department of Physics, Korea University, Seoul 136-701, Korea
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Abstract

We have fabricated metal/ferroelectric/insulator/semiconductor (MEFIS) capacitors of Pt/SrBi2Ta2O9(SBT)/CeO2/Si and Pt/SBT/Ce-Si-O/Si. The cerium silicate (Ce-Si-O) layer is formed by reaction between CeO2 thin film and SiO2/Si substrate at 1100 °C. The SBT film on the cerium silicate layer is smoother than the SBT/CeO2. The memory window of the SBT/Ce-Si-O increases to 1.4 V at a sweep voltage of ±5 V, whereas the memory window of the SBT/CeO2 is 0.8 V at the same sweep voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 543
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Miller, S. L. and McWhorter, P. J., J. Appl. Phys. 72, 5999 (1992)Google Scholar
2. Huang, C., Lin, H., and Rabson, T., Integrated Ferroelectrics 4, 191 (1994)Google Scholar
3. Oishi, Y., Wu, W., Fumoto, K., Okuyama, M., and Hamakawa, Y., Jpn. J. Appl. Phys. 35, 1242 (1996)Google Scholar
4. Kim, Y. T. and Shin, D. S., Appl. Phys. Lett. 71, 3507 (1997)Google Scholar
5. Lee, H. N., Lim, M. H., Kim, Y. T., Kalkur, T. S.., and Choh, S. H., Jpn. J. Appl. Phys., 37, 1107 (1998)Google Scholar
6. Shin, D. S., Lee, H. N., Lee, C. W., Kim, Y. T., and Choi, I. H., Jpn. J. Appl. Phys. 37, 5189 (1998)Google Scholar