Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-12-01T02:53:41.874Z Has data issue: false hasContentIssue false

Effect of Cation Sublattice Ordering on Structure and Raman Scattering of ZnGeN2

Published online by Cambridge University Press:  27 February 2013

Eric Blanton
Affiliation:
Physics Department, Case Western Reserve University, Cleveland, OH 44106
Keliang He
Affiliation:
Physics Department, Case Western Reserve University, Cleveland, OH 44106
Jie Shan
Affiliation:
Physics Department, Case Western Reserve University, Cleveland, OH 44106
Kathleen Kash
Affiliation:
Physics Department, Case Western Reserve University, Cleveland, OH 44106
Get access

Abstract

The semiconductor ZnGeN2 was grown by a vapor-liquid-solid mechanism. Ordering of the Zn-Ge sublattice with growth temperature and Zn partial pressure was investigated by powder x-ray diffraction and was found to be sensitive to the growth temperature and insensitive, over the range explored, to the Zn and NH3 partial pressures. The degree of disorder on the cation sublattice was observed to correlate with the suppression of predicted Raman peaks and the emergence of phonon density-of-states features.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Lit. review in Punya, A., Lambrecht, W.R.L., and van Schilfgaarde, M., Phys. Rev. B 84, 165204 (2011).CrossRefGoogle Scholar
Paudel, T.R. and Lambrecht, W.R.L., Phys. Rev. B 79, 245205 (2009).CrossRefGoogle Scholar
Maunaye, M. and Lang, J., Mat. Res. Bull. Vol. 5, pp. 793796 (1970).CrossRefGoogle Scholar
Wintenberger, M., Maunaye, M., and Laurent, Y., Mat. Res. Bull. Vol. 8, pp. 10491054 (1973).CrossRefGoogle Scholar
Larson, W.L., Maruska, H.P., and Stevenson, D.A., J. Electrochem. Soc. Vol. 121, Issue 12, pp. 16731674 (1974).CrossRefGoogle Scholar
Endo, T., Sato, Y., Takizawa, H., and Shimada, M., J. of Mat. Sci. Letters 11, pp. 424426 (1992).CrossRefGoogle Scholar
Kikkawa, S. and Morisaka, H., Solid State Communications 112, pp. 513515 (1999).CrossRefGoogle Scholar
Peshek, T.J., Paudel, T.R., Kash, K., and Lambrecht, W.R.L., Phys. Rev. B 77, 235213 (2008).CrossRefGoogle Scholar
Peshek, T.J., Wang, S., Angus, J.C., and Kash, K., Growth and Raman Spectroscopy of Single Crystal ZnGeN2 Rods Grown from a Molten Zn/Ge alloy, 2007 MRS Proceedings, Volume 1040-Q01-01.CrossRefGoogle Scholar
Paudel, T.R. and Lambrecht, W.R.L., Phys. Rev. B 78, 115204 (2008).CrossRefGoogle Scholar