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The Effect of Annealing on the Structure of Epitaxial CaF2 Films on Si(100)

Published online by Cambridge University Press:  25 February 2011

Julia M. Phillips ,
J. E. Palmer ,
N. E. Hecker  and
C. V. Thompson
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. E. Palmer
Affiliation:
Dept. of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
N. E. Hecker
Affiliation:
Dept. of Physics, Harvard University, Cambridge, MA 02138
C. V. Thompson
Affiliation:
Dept. of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We have studied the effect of different annealing conditions on the crystallinity and morphology of 1000Å epitaxial CaF2 films on Si(100). The crystallinity of the films is improved by the anneals, with the highest anneal temperatures giving the greatest improvement. The results are consistent with the model previously proposed to explain the success of rapid thermal annealing in improving thicker epitaxial CaF2 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 191
Copyright
Copyright © Materials Research Society 1989

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References

1. Phillips, J. M., Batstone, J. L., and Hensel, J. C., Mat. Res. Soc. Symp. Proc. 116, 403 (1988) and references therein.Google Scholar
2. Ishiwara, H. and Asano, T., Appl. Phys. Lett. 40, 66 (1982).Google Scholar
3. Schowalter, L., Fathauer, R. W., Goehner, R. P., Turner, L. G., DeBlois, R. W., Hashimoto, S., Peng, J.-L., Gibson, W. M., and Krusius, J. P., J. Appl. Phys. 58, 302 (1985).Google Scholar
4. Pfeiffer, L., Phillips, J. M., Smith, R. P. III, Augustyniak, W. M., and West, K. W., Appl. Phys. Lett. 46, 947 (1985).Google Scholar
5. Phillips, J. M., Pfeiffer, L., Joy, D. C., Smith, T. P. III, Gibson, J. M., Augustyniak, W. M., and West, K. W., J. Electrochem. Soc. 133, 224 (1986).Google Scholar
6. Batstone, J. L. and Phillips, J. M., Mat. Res. Soc. Symp. Proc. (in press).Google Scholar
7. Flynn, C. P., J. Phys. F 18, L195 (1988).Google Scholar