Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-26T04:10:27.207Z Has data issue: false hasContentIssue false
  • English
  • Français

The ECR-Plasma Deposition of Silicon Nitride on a Tunnel Oxide

Published online by Cambridge University Press:  16 February 2011

J. C. Barbour ,
H. J Stein  and
C. A. Outten
J. C. Barbour
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
H. J Stein
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
C. A. Outten
Affiliation:
Department of Nuclear Engineering, University of Michigan, Ann Arbor, MI 48109
Get access

Abstract

Gate dielectric-quality silicon nitride films were deposited on a tunnel oxide from an SiH4/N2 gas mixture using an electron cyclotron resonance (ECR) plasma. Electrical characteristics depend not only upon the quality of the nitride film but also upon the state of the interfacial oxide. Quasi-static and 1 MHz capacitance-voltage measurements show that a nitride film deposited at 200°C on 2 nm thick thermally-grown oxide (tunnel oxide) on an unbiased Si substrate have an interface state density of l.5×1011/cm2-eV. Time-of-flight elastic recoil detection (TOF-ERD) was used to examine the level of mixing between the tunnel oxide and the deposited silicon nitride as a function of bias voltage. TOF-ERD showed that for an applied bias of −350 V (ion energy ≈ 380 eV), the deposition of a 10 nm thick film was completely mixed to form an oxynitride whereas the tunnel oxide remained intact for an unbiased sample. (Interdiffusion resulting from energetic-beam heating was ruled-out as a possibility for the mixing.)

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 91
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Pfeffer, R. L., Gerardi, G. J., Lux, R. A., Jones, K. A., Poindexter, E. H., Chang, W. H., and Devine, R. A. B., in Characterization of Plasma-Enhanced CVD Processes, edited by Lucovsky, G., Ibbotson, D. E., and Hess, D. W. (Materials Research Society, Pittsburgh, 1990),Vol.165, pp. 227–232.Google Scholar
[2] Dzioba, S., in Characterization of Plasma-Enhanced CVD Processes, edited by Lucovsky, G., Ibbotson, D. E., and Hess, D. W. (Materials Research Society, Pittsburgh, 1990), Vol.165, pp. 91–100.Google Scholar
[3] Matsuo, S. and Kiuchi, M., Jpn. J. Appl. Phys. 22 (1983) 121.Google Scholar
[4] Ota, Y., Hu, P. H-S., Seabury, C. W., and Brown, M. G., J. Appl. Phys. 61 (1987) 404.Google Scholar
[5] Dautrement-Smith, W. C. and Feldman, L. C., J. Vac. Sci. Technol., A3 (1985) 873.Google Scholar
[6] Matsuo, S., in Handbook of Thin-Film Deposition Processes and Techniques, edited by Schuegraf, K. K. (Noyes Publications, Park Ridge, New Jersey, 1990), pp. 147–169.Google Scholar
[7] Manabe, Y. and Mitsuyu, T., J. Appl. Phys. 66, 2475 (1989).Google Scholar
[8] Dzioba, S., Meikle, S., and Streater, R. W., J. Electrochem. Soc. Accepted.Google Scholar
[9] Barbour, J.C., Stein, H. J., Popov, O.A., Yoder, M., and Outten, C.A., J. Vac. Sci. Technol. B Proceedings of the 1990 Fall AVS Meeting, in press.Google Scholar
[10] Peercy, P. S. and Stein, H. J., in Proceedings of the Electrical Chemical Society, edited by Kapoor, V. J. and Stein, H. J., (The Electrical Chemical Society, Pennington, New Jersey, 1983), Vol.83–8, p. 3.Google Scholar
[11] Whitlow, H. J., in High Energy and Heavy Ion Beams in Materials Analysis, edited by Tesmer, J. R., Maggiore, C. J., Nastasi, M. A., Barbour, J. C., and Mayer, J. W. (Materials Research Society, Pittsburgh, 1990), pp. 243–256.Google Scholar
[12] Brice, D. K., Low energy TRIM code (Sandia National Laboratories).Google Scholar
[13] Nicollian, E. H. and Brews, J. R., MOS (Metal Oxide Semiconductor) Physics and Technology, (Wiley-Interscience, New York, 1982), p. 331.Google Scholar