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Published online by Cambridge University Press: 10 February 2011
This paper will show that scanning force microscopy (also known as atomic force microscopy (AFM)) is a good tool to observe the microscopic changes in the morphology of metallic conductor lines during in situ current stressing with a very high spatial resolution. AFM was used to image AlSi1%Cu0.5% meander structures (1 μm thick, 4 μm wide, 44 mm long) at room temperature during current stressing. The microstructure of the material showed significant changes already at a current density of 1.5 MA/cm2, still before voiding and hillock growth occurred. Growth and reduction of the grain sizes and also grooving and widening of the grain boundaries were observed.