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Dynamics of Wet Oxidation of High-Al-Content III-V Materials

Published online by Cambridge University Press:  10 February 2011

Carol I. H. Ashby
Carol I. H. Ashby*
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185-0603
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Abstract

Oxidation of layers of high-Al-content III-V materials by water vapor has become the enabling process for high-efficiency vertical cavity surface emitting lasers (VCSELs) and has potential applications for reducing substrate current leakage in GaAs-on-insulator (GOI) MESFETs. Because of the established importance of wet oxidation in optoelectronic devices and its potential applications in electronic devices, it has become increasingly important to understand the mechanism of wet oxidation and how it might be expected to affect both the fabrication and subsequent operation of devices that have been made using this technique. The mechanism of wet oxidation and the consequence of this mechanism for heterostructure design and ultimate device operation are discussed here.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 179
Copyright
Copyright © Materials Research Society 1999

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