Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-04T18:41:33.796Z Has data issue: false hasContentIssue false
  • English
  • Français

Dynamics of Rapid Solidification in Silicon

Published online by Cambridge University Press:  26 February 2011

P. S. Peercy ,
Michael O. Thompson  and
J. Y. Tsao
P. S. Peercy
Affiliation:
Sandia National Laboratories Albuquerque, New Mexico 87185
Michael O. Thompson
Affiliation:
Department of Materials Science Cornell University, Ithaca, New York
J. Y. Tsao
Affiliation:
Department of Materials Science Cornell University, Ithaca, New York
Get access

Abstract

Real-time techniques were used to study rapid melt and solidification dynamics in silicon. In crystalline Si, the interface response function was characterized and found to be asymmetric for large deviations from the melting temperature, which will require reevaluation of conventional transition state treatments of melt and solidification. In amorphous Si, the mechanism of explosive crystallization was studied. The explosive transformation is mediated by a buried liquid layer, and detailed measurements have led to the suggestion that polycrystalline Si nucleates at the moving liquid-amorphous interface. For certain conditions, this process could yield fine-grained polycrystalline Si; for other conditions it permits epitaxial regrowth from the underlying crystalline Si for maximum melt thickness much less than the original amorphous layer thickness.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 80: Symposium G – Science and Technology of Rapidly Quenched Alloys , 1986 , 39
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See, e.g., Lompre, L. A., Liu, L. M., Kurz, H. and Bloembergen, N., Appl. Phys. Lett. 43, 168 (1983).Google Scholar
2. See, e.g., Poate, J. M. and Mayer, J. W. in Laser Annealing of Semiconductors, ed. by Poate, J. M. and Mayer, J. W. (Academic Press, New York, 1982), Ch.1.Google Scholar
3. See, e.g., White, C. W., Appleton, B. R. and S. R. Wilson in Ref. 2, Ch. 5.Google Scholar
4. Galvin, G. J., Thompson, Michael O., Mayer, J. W., Hammond, R. B., Paulter, N. and Peercy, P. S., Phys. Rev. Lett. 48, 33 (1982).CrossRefGoogle Scholar
5. Auston, D. H., Surko, C. M., Venkatesan, T.N.C., Slusher, R. E. and Golovohenko, J. A., Appl. Phys. Lett. 33, 437 (1978).CrossRefGoogle Scholar
6. Galvin, G. J., Mayer, J. W. and Peercy, P. S., Appl. Phys. Lett. 46, 644 (1985).Google Scholar
7. Thompson, Michael O., Buckshaum, P. H. and Bokor, J., Mat. Res. Soc. Proc. Vol.35, 181 (1985).CrossRefGoogle Scholar
8. Larson, B. C., White, C. W., Noggle, T. S. and Mills, D. M., Phys. Rev. Lett. 48, 337 (1982).Google Scholar
9. Campisano, S. U., Jacobson, D. C., Poate, J. M., Cullis, A. G. and Chew, N. G., Appl. Phys. Lett. 46, 846 (1985).CrossRefGoogle Scholar
10. Peercy, P. S., Thompson, Michael O. and Tsao, J. Y., Appl. Phys. Lett. 47, 244 (1985).Google Scholar
11. Thompson, Michael O., Galvin, G. J., Mayer, J. W., Peercy, P. S., Poate, J. M., Jacobson, D. C., Cullis, A. G. and Chew, N. G., Phys. Rev. Lett. 52, 2360 (1984).CrossRefGoogle Scholar
12. Peercy, P. S., Thompson, Michael O., Tsao, J. Y and Poate, J. M., Mat. Res. Soc. Proc., Vol.51, 125 (1985).Google Scholar
13. Galvin, G. J., Thompson, Michael O., Mayer, J. W., Peercy, P. S., Hammond, R. B., and Paulter, N., Phys. Rev. B 27, 1079 (1983).CrossRefGoogle Scholar
14. Baeri, P., Campisano, S. U., Foti, G. and Rimini, E., J. Appl. Phys. 50, 788 (1979).Google Scholar
15. Wood, R. F. and Giles, G. E., Phys. Rev. B 23, 2923 (1981).Google Scholar
16. Thompson, Michael O. (unpublished).Google Scholar
17. See, e.g., Spaepen, F. and Turnbull, D. in Laser Annealing of Semiconductors, ed. by Poate, J. M. and Mayer, J. W. (Academic Press, NY, 1982), pp.15-41 Google Scholar
18. Tsao, J. Y., Aziz, M. J., Peercy, P. S. and Thompson, Michael O., (these proceedings).Google Scholar
19. Bucksbaum, P. H. and Thompson, Michael O. (to be published)Google Scholar
20. Tsao, J. Y., Peercy, P. S. and Thompson, Michael O., J. Mater. Res. (to be published).Google Scholar
21. Larson, B. C., Tischler, J. Z. and Mills, D. M., J. Mater. Res. 1, 144 (1986)Google Scholar
22. Donovan, E. P., Spaepen, F., Turnbull, D., Poate, J. M. and Jacobson, D. C., J. Appl. Phys. 57, 1795 (1985).Google Scholar
23. Spaepen, F. and Turnbull, D. in Laser-Solid Interactions and Laser Processing, ed. by Ferris, S. D., Leamy, H. J. and Poate, J. M., 73–83 (AIP, New York, 1978).Google Scholar
24. Bagley, B. G. and Chen, H. S. in Ref. 23, pp. 97-101.Google Scholar
25. Gore, G., Philos. Mag. 9, 73 (1855).CrossRefGoogle Scholar
26. Lowndes, D. H., Jellison, G. E. Jr., Pennycook, S. J., Withrow, S. P. and Mashburn, D. N., Appl. Phys. Lett. 48, 1389 (1986).CrossRefGoogle Scholar
27. Narayan, J., White, C. W., Holland, O. W. and Aziz, M. J., J. Appl. Phys. 56, 1821 (1984).Google Scholar
28. Sinke, W. and Saris, F. W., Phys. Rev. Lett. 53, 2121 (1984).CrossRefGoogle Scholar
29. Peercy, P. S., Tsao, J. Y., Thompson, Michael O. and Stiffler, S. (to be published).Google Scholar
30. Wood, R. F. and Geist, G. A., Phys. Rev. Lett. 57, 873 (1986).CrossRefGoogle Scholar
31. Bruines, J. P., van Hal, R. P. M., Boots, H. M. J., Polman, A. and Saris, F. W., Appl. Phys. Lett. 49, 1160 (1986).Google Scholar
32. Narayan, J., Fathy, D., Oen, O. S. and Holland, O. W., Mater. Lett. 2, 211 (1984).Google Scholar
33. Devaud, G. and Turnbull, D., Appl. Phys. Lett. 46, 844 (1985).Google Scholar
34. Peercy, P. S. and Thompson, Michael O., Mat. Res. Soc. Symp. Proc., 35, 53 (1985).CrossRefGoogle Scholar
35. Liu, J. M., Yen, R., Kurz, H. and Bloembergen, N., Appl. Phys. Lett. 39, 755 (1981).CrossRefGoogle Scholar
36. Cullis, A. G., Webber, H. C., Chew, N. G., Poate, J. M. and Baeri, P., Phys. Rev. Lett. 49, 219 (1982).CrossRefGoogle Scholar
37. Tsao, J. Y. and P. S. Peercy (to be published).Google Scholar
38. Thompson, Michael O., Mayer, J. W., Cullis, A. G., Webber, H. C., Chew, N. G., Poate, J. M. and Jacobson, D. C., Phys. Rev. Lett. 50, 896 (1983).Google Scholar
39. Peercy, P. S., Poate, J. M., Thompson, Michael O. and Tsao, J. Y., Appl. Phys. Lett. 48, 1651 (1986).CrossRefGoogle Scholar