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Dual Damascene Reactive Ion Etch Polymer Characterization through X-Ray Photoelectron Spectroscopy for 65 nm and 45nm Technology Nodes

Published online by Cambridge University Press:  31 January 2011

Samuel Choi
Affiliation:
[email protected], IBM, Research, 2070 Route 52, Hopewell Junction, New York, 12533, United States, 8458923613
Chet Dziobkowski
Affiliation:
[email protected], IBM Microelectronics SRDC, Hopewell Junction,, New York, United States
Leo Tai
Affiliation:
[email protected], IBM Microelectronics SRDC, Hopewell Junction,, New York, United States
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Abstract

At 65nm and beyond technology nodes, copper interconnect formation in dual damascene integration is continually challenged from a polymer management perspective. Highly polymeric plasma chemistry is required to reduce line edge roughness, shape physical profile, and control critical dimension across a 300mm wafer. But too much fluorocarbon deposition on a wafer results in poor defects yield.

In this paper, X-ray photoelectron spectroscopy (XPS) characterization technique is used to quantify and to optimize a metal line reactive ion etch process to increase electrical opens yield. A reduction of 2 at.% in carbon mass results in a Do (defects/cm2) improvement from > 2.0 to less than 1.0. This result is realized without a shift to the trench physical profile which is important for reliability performance. Moreover, with a shorter turnaround time of XPS characterization compared to electrical hardware splits, quicker yield learning cycle is realized for both RIE process and module integration.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

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