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Drift Mobility Measurements Under Single and Double Injection in a-Si:H

Published online by Cambridge University Press:  26 February 2011

L. Xu ,
G. Winborne ,
M. Silver  and
V Cannella
L. Xu
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514 Nankai University, Tianjin, P.R. China
G. Winborne
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514
M. Silver
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514
V Cannella
Affiliation:
Ovonic Imaging Systems, 1896 Barrett St., Troy, MI 48084
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Abstract

Drift mobility measurements under high level double injection in p/i/n and single injection in M/i/n devices have been made as a function of d.c. voltage and temperature using a small step voltage technique. For comparable ratio's of V/L2 the transit time of injected electrons was of order one decade shorter under double injection than under single injection. The room temperature drift mobility for single injection was approximately 1cm2−1s−1. We attribute the difference in drift transit time to a higher extended state mobility with double injection than with single injection due to the neutralization of charged defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 101
Copyright
Copyright © Materials Research Society 1987

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References

1. Silver, M., Adler, D., Shaw, M.P. and Cannella, V., Phil. Mag. B 53, L89 (1986)Google Scholar
2. Tiedje, T., Semicond. and Semimetals 21 C 207 (1984)Google Scholar