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Double Channel AlGaN/GaN Heterostructure Field Effect Transistor
Published online by Cambridge University Press: 10 February 2011
Abstract
We report on a Double Channel A1GaN/GaN Heterostructure Field Effect Transistor, where the bottom channel is formed by a GaN-AlGaN-GaN Semiconductor-Insulator-Semiconductor structure. The series resistance for the bottom channel is strongly dependent on the drain bias. This new design demonstrates that the current carrying capability of AlGaN/GaN HFETs can be enhanced using multi channel structures.
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- Research Article
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- Copyright © Materials Research Society 1998
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