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Doping Study of Se into AlGaAs Layers Grown by MBE, and their Application to HEMT Structures

Published online by Cambridge University Press:  26 February 2011

T. Maed ,
T. Ishikawa  and
K. Kondo
T. Maed
Affiliation:
Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
T. Ishikawa
Affiliation:
Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
K. Kondo
Affiliation:
Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Abstract

We studied doping Se into AlGaAs layers using PbSe as a dopant source for molecular beam epitaxy (MBE). Good controllability and abruptness equivalent to that of Si-doping were obtained. Se-doping was successfully applied to HEMT structures with reduced DX center concentrations. The two dimensional electron gas (2DEG) characteristics of these structures were comparable to those of Si-doped structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 239
Copyright
Copyright © Materials Research Society 1989

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References

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