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Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Published online by Cambridge University Press:  01 February 2011

Xiaodong Pi
Affiliation:
[email protected], University of Minnesota, Mechanical Engineering, 111 Church Street S.E., University of Minnesota, minneapolis, MN, 55455, United States
U. Kortshagen
Affiliation:
[email protected], University of Minnesota, Mechanical Engineering, 111 Church Street S.E., University of Minnesota, minneapolis, MN, 55455, United States
J. Kakalios
Affiliation:
[email protected], University of Minnesota, Physics and astronomy, 116 Church Street S.E., University of Minnesota, minneapolis, MN, 55455, United States, 612624-9856, 612-624-4578
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Abstract

Hydrogenated amorphous silicon films containing silicon nanocrystalline inclusions (a/nc-Si:H) that have been n-type doped have been synthesized using a dual-plasma co-deposition system. We report the structural and electronic properties of n-type doped a/nc-Si:H as a function of phosphine doping level and nanocrystalline concentration. The volume fraction of nanocrystals in the doped a/nc-Si:H thin films is measured using Raman spectroscopy, and the hydrogen binding configurations are characterized using infra-red absorption spectroscopy. In undoped a/nc-Si:H, the inclusion of low and moderate nanocrystalline concentrations results in an increase in the dark conductivity, compared to a-Si:H films grown without nanocrystalline inclusions. In contrast, the addition of even a low concentration of silicon nanoparticles in doped a/nc-Si:H thin films leads to a decrease in the dark conductivity and photoconductivity, compared to pure a-Si:H films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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