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Dopant Uniformity and Concentration in Boron Doped Single Crystal Diamond Films

Published online by Cambridge University Press:  07 March 2012

Shannon. N. Demlow ,
I. Berkun ,
M. Becker ,
T. Hogan  and
T.A. Grotjohn
Shannon. N. Demlow
Affiliation:
Michigan State University, Electrical and Computer Eng., East Lansing, MI 48824, U.S.A.
I. Berkun
Affiliation:
Michigan State University, Electrical and Computer Eng., East Lansing, MI 48824, U.S.A.
M. Becker
Affiliation:
Fraunhofer USA Center for Coatings and Laser Applications, East Lansing, MI 48824, U.S.A.
T. Hogan
Affiliation:
Michigan State University, Electrical and Computer Eng., East Lansing, MI 48824, U.S.A.
T.A. Grotjohn
Affiliation:
Michigan State University, Electrical and Computer Eng., East Lansing, MI 48824, U.S.A. Fraunhofer USA Center for Coatings and Laser Applications, East Lansing, MI 48824, U.S.A.
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Abstract

High quality single crystal boron-doped diamond films are deposited in a microwave plasma-assisted CVD reactor with feedgas mixtures including hydrogen, methane, diborane, and carbon dioxide at reactor pressures of 160 Torr. The effect of diborane levels and other growth parameters on the incorporated boron levels are investigated, and the doping efficiency is calculated over a wide range of boron concentrations. The boron level is investigated using infrared absorption, and compared to SIMS measurements, and defects are shown to affect the doping uniformity.

Keywords

defectsdiamondinfrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1395: Symposium N – Diamond Electronics and Biotechnology–Fundamentals to Applications V , 2012 , mrsf11-1395-n03-02
Copyright
Copyright © Materials Research Society 2012

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References

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