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Dopant Incorporation and Doping Efficiency in a-Si:H and a-Ge:H

Published online by Cambridge University Press:  28 February 2011

Martin Stutzmann
Martin Stutzmann*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304 and Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Federal Republic of Germany
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Abstract

Doping of hydrogenated amorphous silicon and germanium with boron, phosphorus, and arsenic is investigated. The incorporation of the dopants from the gas phase into the solid film is found to differ strongly for the various dopant-host systems. The doping efficiency is calculated from measurements of the density of dangling bond defects and of shallow band-tail states as a function of the doping level. A common square root dependence of the efficiency on dopant gas concentration is obtained.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 203
Copyright
Copyright © Materials Research Society 1986

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References

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