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Donor-like Deep Level Defects in GaN Characterized by Double-correlation Deep Level Transient Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Mo Ahoujja ,
M Hogsed ,
Y. K. Yeo  and
R. L. Hengehold
Mo Ahoujja
Affiliation:
[email protected], University of Dayton, Physics, 300 College park, Dayton, Ohio, 45469, United States
M Hogsed
Affiliation:
[email protected], Air force Institute of Technology, Engineering Physics, United States
Y. K. Yeo
Affiliation:
[email protected], Air force Institute of Technology, Engineering Physics, United States
R. L. Hengehold
Affiliation:
[email protected], Air force Institute of Technology, Engineering Physics, United States
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Abstract

Si doped GaN grown by molecular beam epitaxy on sapphire substrates were characterized by capacitance transient spectroscopy. Conventional deep level transient spectroscopy (DLTS) measurements displayed six deep level defects, labeled A1, A, B, C1, C, and D, with activation energy ranging from 0.20 to 0.82 eV below the conduction band. Based on the logarithmic dependence of the DLTS spectral peaks on the filling pulse width, it is deduced that the defects A, B, C, and D are concentrated in the vicinity of line dislocations. Double-correlation DLTS (DDLTS) measurements, on the other hand, showed that only defects A (0.82 eV) and D (0.22 eV) exhibited deep donor-like characteristics. Following a 1.0 MeV electron irradiation of the GaN sample, one radiation-induced peak, E, with activation energy less than 0.20 eV was observed in the DLTS spectrum. However, after annealing at 350 °C, this DLTS peak intensity was found to diminish significantly.

Keywords

nitridedeep level transient spectroscopy (DLTS)defects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF24-01
Copyright
Copyright © Materials Research Society 2006

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