Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-28T04:21:51.875Z Has data issue: false hasContentIssue false
  • English
  • Français

Domain Formation in Nano-patterned PZT Thin Films

Published online by Cambridge University Press:  12 July 2012

Martin Waegner ,
Mathias Schröder ,
Gunnar Suchaneck ,
Heinz Sturm ,
Christiane Weimann ,
Lukas M. Eng  and
Gerald Gerlach
Martin Waegner
Affiliation:
TU Dresden, Solid-State Electronics Laboratory, 01062 Dresden, Germany
Mathias Schröder
Affiliation:
TU Dresden, Institute of Applied Photophysics, 01062 Dresden, Germany
Gunnar Suchaneck
Affiliation:
TU Dresden, Solid-State Electronics Laboratory, 01062 Dresden, Germany
Heinz Sturm
Affiliation:
BAM – Federal Institute of Material Research and Testing, Div. Nanotribology and Nanostructuring of Surfaces, 12205 Berlin, Germany
Christiane Weimann
Affiliation:
BAM – Federal Institute of Material Research and Testing, Div. Nanotribology and Nanostructuring of Surfaces, 12205 Berlin, Germany
Lukas M. Eng
Affiliation:
TU Dresden, Institute of Applied Photophysics, 01062 Dresden, Germany
Gerald Gerlach
Affiliation:
TU Dresden, Solid-State Electronics Laboratory, 01062 Dresden, Germany
Get access

Abstract

In this work, reactive magnetron-sputtered Pb(Zr,Ti)O3thin films were used to fabricate well-ordered nanodot arrays by means of nanosphere lithography (NSL). NSL is based on a two-step etch process by means of, firstly adjusting the diameter of polystyrene spheres in the self-assembled polymeric nanosphere mask using reactive ion etching, and secondly transferring the mask to the substrate by ion milling with adjusted heights. Hence, structures with different aspect ratios can be fabricated.

Piezoresponse force microscopy was used as the inspection tool on both non-patterned and patterned films. Both the topography and polarization out of plane and in plane was deduced in this mode. Grains of nanodots with low aspect ratio form domain structures comparable to domains in non-patterned films. In contrast to that, nanodots with a higher aspect ratio form particular structures. The in-plane amplitude images show mostly a bisectioned domain assembly, while the out-of-plane amplitude images show in some cases more complex structures like “c”-shaped domains or multi-domains around a center domain.

The patterning of the ferroelectric material was shown to affect the formation of ferroelectric domains. The initial polycrystalline, randomly-ordered films are re-oriented and show domain structures depending on nanodisc diameter and aspect ratio. This may enable tailoring of ferroelectric materials in their piezoelectric and pyroelectric properties by patterning.

Keywords

nanostructurepiezoresponseferroelectric
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1454: Symposium HH – Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems , 2012 , pp. 267 - 272
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Anliker, M., Brugger, H.R., Kaenzig, W., Helv. Phys. Acta 27, 99–124 (1954)Google Scholar
Cain, M. and Morrell, R., Appl. Organometal. Chem. 15, 321–330 (2001)Google Scholar
Gruverman, A., Wu, D., Fan, H.-J., Vrejoiu, I., Alexe, M., Harrison, R.J., Scott, J.F., J. Phys. Condens. Matter 20(34), 342201 (2008)CrossRefGoogle Scholar
Rodriguez, B.J., Gao, X.S., Liu, L.F., Lee, W., Naumov, I.I., Bratkovsky, A.M., Hesse, D., Alexe, M, Nano Lett. 9(3), 1127–1131 (2009)Google Scholar
Stachiotti, M.G. and Sepliarsky, M., Phys. Rev. Lett. 106(13), 137601 (2011)CrossRefGoogle Scholar
Naumov, I., Bratkovsky, A.M., Phys. Rev. Lett. 101(10), 107601 (2008)Google Scholar
Hong, L., Soh, A.K., Mech. Mater. 43, 342–347 (2011)CrossRefGoogle Scholar
Ivry, Y., Chu, D., Scott, J.F., Salje, E.K.H., Durkan, C., Nano Lett. 11, 4619–4625 (2011)CrossRefGoogle Scholar
Jia, C.-L., Urban, K.W., Alexe, M., Hesse, D., Vrejoiu, D., I., Science 331, 1420–1423 (2011)CrossRefGoogle Scholar
Byrne, D., Schilling, A., Scott, J.F., Gregg, J.M., Nanotechnol. 19(16), 165608 (2008)Google Scholar
Schilling, A., Byrne, D., Catalan, G., Webber, K.G., Genenko, Y.A., Wu, G.S., Scott, J.F., Gregg, J.M., Nano Lett. 9(9), 3359–3364 (2009)CrossRefGoogle Scholar
Vidyarthi, V.S., Multi-target sputtering technology of Pb(Zr, Ti)O3 thin films for electron devices (TUDpress, Dresden, 2008)Google Scholar
Waegner, M., Suchaneck, G., Gerlach, G., Integr. Ferroelectr. 123, 75–80 (2011)Google Scholar
Abplanalp, M., Eng, L.M., Günther, P., Appl. Phys. A 66, 231–234 (1998)CrossRefGoogle Scholar
Kiselev, D., Bdikin, I., Movchikova, A., Kholkin, A., Suchaneck, G., Gerlach, G., Mater. Res. Soc. Symp. Proc. 966, 0966–T07-02 (2006)CrossRefGoogle Scholar
Suchaneck, G., Sander, T., Deyneka, A., Gerlach, G., Jastrabik, L., Ferroelectr. 298, 309–316 (2004)CrossRefGoogle Scholar
Kalinin, S.V., Rodriguez, B.J., Jesse, S., Shin, J., Baddorf, A.P., Gupta, P., Jain, H., Williams, D.B., Gruverman, A., MAM 12(3), 1–15 (2006)Google Scholar